Patents by Inventor Gijs Dingemans
Gijs Dingemans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220201831Abstract: A radiation system configured to produce radiation and comprising a droplet generator (3) configured to produce a droplet of fuel traveling towards a plasma formation region, a laser system operative to generate a pre-pulse (PP) and a main pulse (MP), wherein the pre-pulse is configured to condition the droplet for receipt of the main pulse, and wherein the main pulse is configured to convert the conditioned droplet into plasma producing the radiation and a control system configured to control a spatial offset between the pre-pulse and the droplet in a plane transverse to a propagation direction of the pre-pulse, wherein the control system is configured to adjust the spatial offset so as to maximize a velocity change of the conditioned droplet in a plane transverse to a propagation direction of the main pulse.Type: ApplicationFiled: March 3, 2020Publication date: June 23, 2022Applicant: ASML Netherlands B.V.Inventors: Gijs DINGEMANS, Colm O'GORMAN, Ruben HAVERKORT
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Patent number: 9548405Abstract: A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is arranged between the semiconductor layer and the collecting layer. The buffer layer is designed as a tunnel contact between the semiconductor layer and the collecting layer. The buffer layer essentially includes a material with a surface charge density of at least 1012 cm?2, preferably of at least 5×1012 cm?2, and more preferably of at least 1013 cm?2.Type: GrantFiled: December 16, 2009Date of Patent: January 17, 2017Assignee: Q-CELLS SEInventors: Peter Engelhart, Sven Wanka, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Patent number: 9343304Abstract: An exemplary embodiment of the present invention provides a method of depositing of a film on semiconductor wafers. In a first step, a film thickness of 3 um or less is deposited on wafers accommodated in a wafer boat in a vertical furnace at a deposition temperature of the furnace while a deposition gas is flowing. During the first step, the temperature may be held substantially constant. In a second step, a temperature deviation or variation of at least 50° C. from the deposition temperature of the first step is applied and the furnace temperature is returned to the deposition temperature of the first step while the flow of the deposition gas is stopped. The first and second steps are repeated until a desired final film thickness is deposited.Type: GrantFiled: September 26, 2014Date of Patent: May 17, 2016Assignee: ASM IP HOLDING B.V.Inventors: Frank Huussen, Gijs Dingemans, Steven R. A. Van Aerde
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Publication number: 20160093487Abstract: An exemplary embodiment of the present invention provides a method of depositing of a film on semiconductor wafers. In a first step, a film thickness of 3 um or less is deposited on wafers accommodated in a wafer boat in a vertical furnace at a deposition temperature of the furnace while a deposition gas is flowing. During the first step, the temperature may be held substantially constant. In a second step, a temperature deviation or variation of at least 50° C. from the deposition temperature of the first step is applied and the furnace temperature is returned to the deposition temperature of the first step while the flow of the deposition gas is stopped. The first and second steps are repeated until a desired final film thickness is deposited.Type: ApplicationFiled: September 26, 2014Publication date: March 31, 2016Inventors: Frank HUUSSEN, Gijs DINGEMANS, Steven R.A. Van Aerde
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Publication number: 20150221788Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.Type: ApplicationFiled: April 14, 2015Publication date: August 6, 2015Inventors: Peter ENGELHART, Robert SEGUIN, Wilhelmus Mathijs Marie KESSELS, Gijs DINGEMANS
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Patent number: 9029690Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.Type: GrantFiled: May 31, 2011Date of Patent: May 12, 2015Assignee: Q-Cells SEInventors: Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Patent number: 8933525Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.Type: GrantFiled: May 31, 2010Date of Patent: January 13, 2015Assignee: Q-Cells SEInventors: Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Publication number: 20130330936Abstract: A method of forming an Al2O3/SiO2 stack comprising injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of: BDEAS Bis(diethylamino)silane SiH2(NEt2)2, BDMAS Bis(dimethylamino)silane SiH2(NMe2)2, BEMAS Bis(ethylmethylamino)silane SiH2(NEtMe)2, DIPAS (Di-isopropylamido)silane SiH3(NiPr2), DTBAS (Di tert-butylamido)silane SiH3(NtBu2); injecting into the reaction chamber an oxygen source selected in the list: oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma; and injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound selected in the list: Al(Me)3, Al(Et)3, Al(Me)2(OiPr), Al(Me)2(NMe)2 or Al(Me)2(NEt)2.Type: ApplicationFiled: December 15, 2011Publication date: December 12, 2013Applicants: TECHNISCHE UNIVERSITEIT EINDHOVEN, L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDEInventors: Christophe Lachaud, Alain Madec, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Publication number: 20120091566Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.Type: ApplicationFiled: May 31, 2010Publication date: April 19, 2012Applicant: Q-CELLS SEInventors: Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Publication number: 20110308581Abstract: A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is arranged between the semiconductor layer and the collecting layer. The buffer layer is designed as a tunnel contact between the semiconductor layer and the collecting layer. The buffer layer essentially includes a material with a surface charge density of at least 1012 cm?2, preferably of at least 5×1012 cm?2, and more preferably of at least 1013 cm?2.Type: ApplicationFiled: December 16, 2009Publication date: December 22, 2011Applicant: Q-CELLS SEInventors: Peter Engelhart, Sven Wanka, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
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Publication number: 20110290318Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.Type: ApplicationFiled: May 31, 2011Publication date: December 1, 2011Applicant: Q-CELLS SEInventors: Peter ENGELHART, Robert SEGUIN, Wilhelmus Mathijs Marie KESSELS, Gijs DINGEMANS
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Publication number: 20110284064Abstract: A solar cell includes a semiconductor layer with first doping, an inducing layer arranged on the semiconductor layer and an inversion layer or accumulation layer which due to the inducing layer is induced underneath the inducing layer in the semiconductor layer. The inducing layer includes a material with a surface charge density of at least 1012 cm?2, preferably of at least 5×1012 cm?2, more preferably of at least 1013 cm?2.Type: ApplicationFiled: December 16, 2009Publication date: November 24, 2011Applicant: Q-CELLS SEInventors: Peter Engelhart, Sven Wanka, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans