Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus comprises: a housing having a treating space therein; a spin head for supporting and rotating a substrate in the treating space; and a chemical supply unit having an injection nozzle for supplying a chemical to the substrate which is supported by the spin head, wherein the injection nozzle comprises a nozzle body, and wherein the nozzle body comprises an inner space for receiving a chemical and minute holes which are connected with the inner space for discharging the chemicals to downward.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Abstract: A substrate-treating apparatus is disclosed. The substrate-treating apparatus may include a vessel configured to provide a treatment space therein, a substrate-supporting unit provided in the vessel to support a substrate, and a spraying member configured to spray treatment solution on the substrate loaded on the substrate-supporting unit. The vessel may have an inner side surface, on which at least one texture pattern is formed.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes removing a portion of the thin film by irradiating a laser to the substrate, and after the removing of the portion of the thin film, removing the remaining portion of the thin film by supplying a chemical to the substrate.

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus comprises: a housing having a treating space therein; a spin head for supporting and rotating a substrate in the treating space; and a chemical supply unit having an injection nozzle for supplying a chemical to the substrate which is supported by the spin head, wherein the injection nozzle comprises a nozzle body, and wherein the nozzle body comprises an inner space for receiving a chemical and minute holes which are connected with the inner space for discharging the chemicals to downward.

Abstract: Provided is an apparatus and method for drying a substrate. The apparatus includes a housing, a substrate support member, a fluid supply member, and a discharge member. The housing provides a space in which a drying process is performed. The substrate support member is provided in the housing to support the substrate. The fluid supply member includes a supply line for supplying a process fluid of a supercritical state to the housing. The discharge member includes a discharge line for discharging the process fluid from the housing. Here, the supply line includes a first supply line provided to supply the process fluid to the housing at a first supply flow rate, and a second supply line provided to supply the process fluid to the housing at a second supply flow rate.

Abstract: Provided is an apparatus for treating a substrate using a supercritical fluid. The substrate treating apparatus includes a housing, a support member disposed within the housing to support the substrate, a supercritical fluid supply unit in which the supercritical fluid is stored, a supply tube connecting the supercritical fluid supply unit to the housing to adjust an amount of supercritical fluid supplied from the supercritical fluid supply unit into the housing, and a vent tube branched from the supply tube to discharge the supercritical fluid remaining in the supply tube. A switching valve opening or closing the vent tube is disposed in the vent tube.

Abstract: A substrate-treating apparatus is disclosed. The substrate-treating apparatus may include a vessel configured to provide a treatment space therein, a substrate-supporting unit provided in the vessel to support a substrate, and a spraying member configured to spray treatment solution on the substrate loaded on the substrate-supporting unit. The vessel may have an inner side surface, on which at least one texture pattern is formed.

Abstract: A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region.

Abstract: Provided is an apparatus for treating a substrate using a supercritical fluid. The substrate treating apparatus includes a housing, a support member disposed within the housing to support the substrate, a supercritical fluid supply unit in which the supercritical fluid is stored, a supply tube connecting the supercritical fluid supply unit to the housing to adjust an amount of supercritical fluid supplied from the supercritical fluid supply unit into the housing, and a vent tube branched from the supply tube to discharge the supercritical fluid remaining in the supply tube. A switching valve opening or closing the vent tube is disposed in the vent tube.

Abstract: Provided is an apparatus and method for drying a substrate. The apparatus includes a housing, a substrate support member, a fluid supply member, and a discharge member. The housing provides a space in which a drying process is performed. The substrate support member is provided in the housing to support the substrate. The fluid supply member includes a supply line for supplying a process fluid of a supercritical state to the housing. The discharge member includes a discharge line for discharging the process fluid from the housing. Here, the supply line includes a first supply line provided to supply the process fluid to the housing at a first supply flow rate, and a second supply line provided to supply the process fluid to the housing at a second supply flow rate.

Abstract: Provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes a housing providing a space for performing a process, and a plurality of support members vertically arranged in the housing at predetermined intervals to support edges of substrates, respectively.

Abstract: In a spin unit for rotating a substrate and a method of processing the substrate, the substrate is secured on a support and is rotated on the support. Processing materials including drying gases, etching solutions and cleaning solutions are selectively supplied onto a bottom surface of the rotating substrate. The same processing materials are also selectively supplied onto a top surface of the substrate. The top and bottom surfaces of the substrate are simultaneously processed by simultaneous supply of the processing materials through the first and second sub-injectors.

Abstract: In a spin unit for rotating a substrate and a method of processing the substrate, the substrate is secured on a support and is rotated on the support. Processing materials including drying gases, etching solutions and cleaning solutions are selectively supplied onto a bottom surface of the rotating substrate. The same processing materials are also selectively supplied onto a top surface of the substrate. The top and bottom surfaces of the substrate are simultaneously processed by simultaneous supply of the processing materials through the first and second sub-injectors.