Abstract: A method of evaluating a process of fabricating a semiconductor device includes obtaining measurement values from a plurality of sensors and predetermined reference values for each sensor, calculating, for each sensor, a measurement difference value between the reference value and the measurement value, calculating, for each sensor, a reference mean difference value between a maximum reference value for each sensor, which is greater than the reference value, and a minimum reference value for each sensor, which is less than the reference value, and dividing, for each sensor, the measurement difference value by the reference mean difference value to obtain a score value for each sensor.

Abstract: An example embodiment relates to a plasma diagnostic apparatus that exists outside of a plasma generation chamber. The plasma diagnostic apparatus is configured to recognize and/or diagnose a state of plasma using a signal flowing from a floated electrode of a plasma generation apparatus to determine a diagnostic factor of the plasma.

Abstract: The plasma processing apparatus for processing a semiconductor substrate using plasma and a method thereof can maintain a steady state simultaneously while maximizing a plasma electron density. The plasma processing apparatus includes: a chamber which generates plasma to process a semiconductor substrate; upper and lower electrodes arranged in the chamber; a DC power-supply unit which applies a DC voltage to either one of the upper and lower electrodes; and a controller which adjusts a power ratio of the DC voltage applied from the DC power-supply unit to either one of the upper and lower electrodes. As a result, the apparatus certainly confines electrons, so that the electrodes are not emitted from the plasma, resulting in a maximized plasma electron density.