Abstract: A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.

Abstract: A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.

Abstract: A method for making a semiconductor device having front-surface electrical terminals in which the device is manufactured so as to include a bottom electrode, a top electrode and a semiconductor body therebetween. A first bus bar is disposed in a groove in the semiconductor body. It is in electrical communication with the bottom electrode, and includes a tab portion which projects from the device. A second bus bar is in electrical communication with the top electrode, and is disposed atop the first electrode, and electrically insulated therefrom. The tab of the first bus bar provides one terminal of the device and is folded onto the second bus bar and is electrically insulated therefrom. The second bus bar provides the second terminal of the device.

Abstract: A method for making a semiconductor device having front-surface electrical terminals in which the device is manufactured so as to include a bottom electrode, a top electrode and a semiconductor body therebetween. A first bus bar is disposed in a groove in the semiconductor body. It is in electrical communication with the bottom electrode, and includes a tab portion which projects from the device. A second bus bar is in electrical communication with the top electrode, and is disposed atop the first electrode, and electrically insulated therefrom. The tab of the first bus bar provides one terminal of the device and is folded onto the second bus bar and is electrically insulated therefrom. The second bus bar provides the second terminal of the device.

Abstract: A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.

Abstract: An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Abstract: An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

Abstract: Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include: 1) reducing the voltage bias on the cell while increasing the time of application of the voltage; 2) reversing the polarity of the voltage bias on the devices; 3) alternating pulsing between forward and reverse polarity bias; or 4) applying light energy simultaneously with an electrical bias voltage.

Abstract: A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.

Abstract: Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include: 1) reducing the voltage bias on the cell while increasing the time of application of the voltage; 2) reversing the polarity of the voltage bias on the devices; 3) alternating pulsing between forward and reverse polarity bias; or 4) applying light energy simultaneously with an electrical bias voltage.

Abstract: Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include: 1) reducing the voltage bias on the cell while increasing the time of application of the voltage; 2) reversing the polarity of the voltage bias on the devices; 3) alternating pulsing between forward and reverse polarity bias; or 4) applying light energy simultaneously with an electrical bias voltage.

Abstract: Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include: 1) reducing the voltage bias on the cell while increasing the time of application of the voltage; 2) reversing the polarity of the voltage bias on the devices; 3) alternating pulsing between forward and reverse polarity bias; or 4) applying light energy simultaneously with an electrical bias voltage.