Patents by Inventor Giovanni Sammatrice

Giovanni Sammatrice has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INSULATED GATE SEMICONDUCTOR DEVICE WITH OPTIMIZED BREAKDOWN VOLTAGE, AND MANUFACTURING METHOD THEREOF
    Publication number: 20130026536
    Abstract: An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side.
    Type: Application
    Filed: July 26, 2012
    Publication date: January 31, 2013
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Donato Corona, Giovanni Sammatrice, Sebastiano Amara, Salvatore Pisano, Antonio Giuseppe Grimaldi