Patents by Inventor Giwan Yoon

Giwan Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra thin dielectric for electronic devices and method of making same
    Patent number: 5578848
    Abstract: High quality, ultra thin SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29 .ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties, and reliability.
    Type: Grant
    Filed: September 18, 1995
    Date of Patent: November 26, 1996
    Assignee: Regents of the University of Texas System
    Inventors: Dim-Lee Kwong, Giwan Yoon, Jonghan Kim, Liang-Kai Han, Jiang Yan
  • MOS transistor having improved oxynitride dielectric
    Patent number: 5541436
    Abstract: High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.
    Type: Grant
    Filed: November 10, 1994
    Date of Patent: July 30, 1996
    Assignee: The Regents of the University of Texas System
    Inventors: Dim-Lee Kwong, Giwan Yoon, Jonghan Kim
  • Method of making an ultra thin dielectric for electronic devices
    Patent number: 5478765
    Abstract: High quality, ultra thin (<30 .ANG.) SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29.ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.
    Type: Grant
    Filed: May 4, 1994
    Date of Patent: December 26, 1995
    Assignee: Regents of the University of Texas System
    Inventors: Dim-Lee Kwong, Giwan Yoon, Jonghan Kim, Liang-Kai Han, Jiang Yan
  • Method of making MOS transistor having improved oxynitride dielectric
    Patent number: 5397720
    Abstract: High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.
    Type: Grant
    Filed: January 7, 1994
    Date of Patent: March 14, 1995
    Assignee: The Regents of the University of Texas System
    Inventors: Dim-Lee Kwong, Giwan Yoon, Jonghan Kim