Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: A process for modifying a surface of a cast polycrystalline silicon sheet to decrease the light reflectance of the cast polycrystalline sheet is disclosed. The cast polycrystalline silicon sheet has at least one structural feature resulting from the cast polycrystalline silicon sheet being directly cast to a thickness less than 1000 micrometers. The process comprises grit blasting the surface of the cast polycrystalline silicon sheet to give an abraded surface on the cast polycrystalline silicon sheet. The process further comprises chemically etching the abraded surface of the cast polycrystalline silicon sheet to give a chemically-etched, abraded surface. The light reflectance of the chemically-etched, abraded surface is decreased in comparison to the light reflectance of the surface of the cast polycrystalline silicon sheet before the step of grit blasting.

Abstract: A method of forming a solid layer of a semiconducting material on an external surface of a treated mold which extends between a leading edge and a trailing edge comprises selectively modifying a temperature gradient of a mold such that a temperature of the leading edge (T1) is less than a temperature of the trailing edge (T2) to form the treated mold. The method further comprises submersing the treated mold into a molten semiconducting material such that the leading edge of the treated mold is first submersed into the molten semiconducting material. The method also comprises withdrawing the treated mold from the molten semiconducting material to form the solid layer of the semiconducting material on the external surface of the treated mold.

Abstract: A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

Abstract: A method for treating semiconducting materials includes providing a semiconducting material having a crystalline structure, pre-heating a portion of the semiconducting material to a temperature less than the melting temperature of the semiconducting material, and then cooling the semiconducting material prior to exposing at least the portion of the semiconducting material to a heat source to create a melt pool, and cooling the semiconducting material.

Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: The disclosure relates to substrate molds with variable thermal mass. The disclosure relates to substrate molds comprising refractory materials having a leading edge and a trailing edge, wherein the substrate mold has a graded thermal mass comprising a leading edge thermal mass (Mt(lead)) and a trailing edge thermal mass (Mt(trail)), wherein Mt(lead) is less than Mt(trail). The disclosure also relates to methods of making articles of semiconducting material and methods of minimizing total thickness variation in articles of semiconducting material, said methods comprising using the molds disclosed.

Abstract: The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.

Abstract: Pulling rolls for used in forming glass ribbons with reduced defects and cracking are disclosed. In one embodiment, the pulling roll may include a shaft member and a roll assembly. The roll assembly may be positioned on the shaft member for rotation with the shaft member. The roll assembly may include an axially compressed stack of ring elements formed from an inorganic material such as mica paper. The mica paper may include layers of overlapping mica platelets oriented substantially in parallel with one another. A contact surface of the roll assembly may have a Shore D hardness greater than or equal to about 10 and less than or equal to about 60.

Abstract: The disclosure relates to vessels configured to contain molten semiconducting materials.

Abstract: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.

Abstract: A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material.

Abstract: A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

Abstract: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.

Abstract: A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: A process for creating hydrophobic and oleophobic glass surfaces. The process consists of heating a glass article to temperatures near the glass softening point and pressing a textured mold into the glass article to create surface texture. The mold texture is selected to have dimensions that convey hydrophobicity and oleophobicity to the glass article when combined with appropriate surface chemistry. The surface features are controlled through choice of mold texture and through process parameters including applied pressure, temperature, and pressing time. Articles made by this process are also described.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as semiconducting material that may be useful in making photovoltaic cells.