Abstract: A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOx?2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen forming the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen from the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate. In addition to serving as a template for the growth of a high K dielectric layer, the seed layer retards the undesirable oxidation of the silicon surface thereby improving the performance of active devices that include the insulating layer.

Abstract: The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiOxHy layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiOxHy layer. The substantially-hydroxylated SiOxHy layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2.

Abstract: The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.

Abstract: A lithium niobate-based electro-optic device is formed to include a parylene conformal coating layer, as a sealant against moisture. The use of parylene (preferably, parylene-C) has been found to form an acceptable moisture vapor barrier without the need for additional hermetic packaging of the electro-optic device.

Abstract: A lithium niobate-based electro-optic device is formed to include a parylene conformal coating layer, as a sealant against moisture. The use of parylene (preferably, parylene-C) has been found to form an acceptable moisture vapor barrier without the need for additional hermetic packaging of the electro-optic device.

Abstract: A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOx≦2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.

Abstract: A method of fabricating a semiconductor device having a gate dielectric layer. The method includes the step of ion implanting at least one of Zr, Hf, La, Y, Al, Ti and Ta into the gate dielectric layer at low implant energy level to increase the dielectric constant of the dielectric layer. Subsequently, the implanted gate dielectric layer is annealed.

Abstract: A process for forming a metal oxide or a metal silicate gate dielectric layer on a semiconductor substrate is disclosed. A suitably prepared substrate is placed in a chamber. An organic precursor gas is flowed into the chamber. An inorganic precursor gas is then flowed into the chamber. The organic precursor gas catalyzes a reaction between itself, the inorganic precursor and the substrate to form a dielectric layer on the substrate.

Abstract: A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOX≦2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.