Abstract: A radio frequency (RF) interconnect for an optical modulator may comprise a circuit board to route a set of RF signals from a corresponding set of RF feeds to a substrate interface on a surface of a substrate of the optical modulator. The circuit board may be positioned along the surface of the substrate of the optical modulator. The circuit board may include a set of traces. A trace, of the set of traces, may be connected to a corresponding RF feed, of the set of RF feeds, at a height different than a height of the surface of the substrate of the optical modulator. The trace may be connected to the substrate interface.

Abstract: A radio frequency (RF) interconnect for an optical modulator may comprise a circuit board to route a set of RF signals from a corresponding set of RF feeds to a substrate interface on a surface of a substrate of the optical modulator. The circuit board may be positioned along the surface of the substrate of the optical modulator. The circuit board may include a set of traces. A trace, of the set of traces, may be connected to a corresponding RF feed, of the set of RF feeds, at a height different than a height of the surface of the substrate of the optical modulator. The trace may be connected to the substrate interface.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration and other effects that can be present in non-hermetic packages. The bias electrodes include an upper split portion and an optically transparent lower portion. The optically transparent lower layer improves modulation frequency and reduces optical loss.

Abstract: The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration, galvanic, and other effects that can be present in non-hermetic packages. The RF electrodes are supported by a first surface of the electro-optic substrate, while the bias electrodes are supported by a second opposite surface.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration and other effects that can be present in non-hermetic packages. The bias electrodes include an upper split portion and an optically transparent lower portion. The optically transparent lower layer improves modulation frequency and reduces optical loss.

Abstract: The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration, galvanic, and other effects that can be present in non-hermetic packages. The RF electrodes are supported by a first surface of the electro-optic substrate, while the bias electrodes are supported by a second opposite surface.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented.

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented.

Abstract: A downstream wind turbine for converting wind energy into electrical energy. In a preferred embodiment the downstream wind turbine adapted to respond to high winds and gyroscopic precession. The downstream wind turbine comprises a support tower; a yaw bearing attached to the support tower; a support frame operably linked to the bearing; at least one swing arm with one end pivotally attached to the support frame; an elongated carry member pivotally attached to the other end of the swing arm; a wind driven energy conversion system balanced on and attached to the carry member so that the carry member is biased to maintain an approximately horizontal orientation with respect to the support frame and in response to wind proportionally swings downstream, and which responds to gyroscopic precession forces by tilting up or down; and a governor device for modifying at least one dynamic characteristic of the turbine.

Abstract: A downstream wind turbine for converting wind energy into electrical energy. In a preferred embodiment the downstream wind turbine adapted to respond to high winds and gyroscopic precession. The downstream wind turbine comprises a support tower; a yaw bearing attached to the support tower; a support frame operably linked to the bearing; at least one swing arm with one end pivotally attached to the support frame; an elongated carry member pivotally attached to the other end of the swing arm; a wind driven energy conversion system balanced on and attached to the carry member so that the carry member is biased to maintain an approximately horizontal orientation with respect to the support frame and in response to wind proportionally swings downstream, and which responds to gyroscopic precession forces by tilting up or down; and a governor device for modifying at least one dynamic characteristic of the turbine.

Abstract: This invention pertains to a horizontal axis wind turbine of down-wind design that tilts rather than teetering to overcome loads produced by gyroscopic precession. Gyroscopic precession occurs to the rotor as it is spinning when it turns to adjust to or follow a wind directional change. It is absolutely necessary to provide a means by which to overcome this phenomena as it can lead to structural failures due to it's extreme effects. Wind turbines that can not overcome these effects usually have an active yaw system that will turn them very slowly in order to not encounter the effects of the extreme loads produced by gyroscopic precession. This invention also provides a means by which to control the rotor speed based upon the using of the turbine's own weight as a basis for that control. These two functions work in unison and are immediate in their response to provide for a superior dynamic wind turbine design that will be more cost effective to produce as well as maintain.