Abstract: Substrate transfer robot blades used to engage and support a substrate during transfer include a blade body having a blade support surface and at least one pad having a top surface and an opposite bottom surface, a central opening extending from the top surface to the bottom surface, and a resilient portion formed from the at least one pad. The resilient portion formed from the at least one pad extends from and cantilevers from a side surface of the central opening of the at least one pad that is disposed directly on the side surface at the end of a long axis of the resilient portion. The resilient portion further includes a curved substrate contact surface on an outermost end of the resilient portion on which a substrate is supported when disposed on the substrate transfer robot blade.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Abstract: Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Abstract: Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Abstract: Embodiments of substrate transfer robot blades to engage and support a substrate during transfer are provided herein. In some embodiments, a substrate transfer robot may include a blade body having a blade support surface; and a plurality of compliant pads, each comprising a contact surface and an opposite bottom surface supported by the body and arranged to support a substrate when disposed on the substrate transfer robot blade.

Abstract: Embodiments of the invention provide methods for reducing formation of void-type defects on the surface of a substrate during electrochemical plating. Embodiments of the invention provide methods to improve the wetting of a substrate surface prior to immersion and thereby minimize adhesion of bubbles to the substrate surface during immersion. A thin uniform metal oxide is formed on a metal layer on the substrate immediately prior to substrate immersion. In one aspect, exposing the substrate to an oxygen-containing gas, e.g. air, forms the metal oxide. The oxygen-containing gas may be flowed over the substrate or the substrate may be rotated at a high rate in the presence of an oxygen-containing gas. In another aspect, non-uniform metal oxides are first removed from the substrate in an anneal process and a thin uniform metal oxide is subsequently re-formed. An optimized substrate immersion method may also be used to further reduce void defects.

Abstract: Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Abstract: Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Abstract: Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

Abstract: Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.