Patents by Inventor Glen R. Fox
Glen R. Fox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9887205Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.Type: GrantFiled: July 1, 2016Date of Patent: February 6, 2018Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Glen R Fox, Jeffrey S. Pulskamp, Ronald G. Polcawich
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Patent number: 9761785Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.Type: GrantFiled: March 19, 2014Date of Patent: September 12, 2017Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Glen R Fox, Ronald G. Polcawich, Daniel M Potrepka, Luz M Sanchez
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Publication number: 20160315090Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.Type: ApplicationFiled: July 1, 2016Publication date: October 27, 2016Inventors: GLEN R. Fox, Jeffrey S. Pulskamp, Ronald G. Polcawich
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Patent number: 9385306Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.Type: GrantFiled: March 12, 2015Date of Patent: July 5, 2016Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Glen R Fox, Jeffrey S. Pulskamp, Ronald G. Polcawich
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Publication number: 20150263268Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.Type: ApplicationFiled: March 12, 2015Publication date: September 17, 2015Inventors: Glen R Fox, Jeffrey S. Pulskamp, Ronald G. Polcawich
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Patent number: 8866367Abstract: A method for forming an electrical device having a {100}-textured platinum electrode comprising: depositing a textured metal thin film onto a substrate; thermally oxidizing the metal thin film by annealing to convert it to a rocksalt structure oxide with a {100}-texture; depositing a platinum film layer; depositing a ferroelectric film. An electrical device comprising a substrate; a textured layer formed on the substrate comprising metal oxide having a rocksalt structure; a first electrode film layer having a crystallographic texture acting as a template; and at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the first electrode film layer whereby the rocksalt structure of the textured layer facilitates the growth of the first electrode film layer with a {100} orientation which forms a template for the epitaxial deposition of the ferroelectric layer such that the ferroelectric layer is formed with an {001} orientation.Type: GrantFiled: June 5, 2012Date of Patent: October 21, 2014Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka
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Publication number: 20140265734Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.Type: ApplicationFiled: March 19, 2014Publication date: September 18, 2014Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-IInventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez
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Publication number: 20130093290Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.Type: ApplicationFiled: March 30, 2012Publication date: April 18, 2013Applicant: U.S. Government as represented by the Secretary of the ArmyInventors: GLEN R. FOX, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez
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Publication number: 20130093288Abstract: A method for forming an electrical device having a {100}-textured platinum electrode comprising: depositing a textured metal thin film onto a substrate; thermally oxidizing the metal thin film by annealing to convert it to a rocksalt structure oxide with a {100}-texture; depositing a platinum film layer; depositing a ferroelectric film. An electrical device comprising a substrate; a textured layer formed on the substrate comprising metal oxide having a rocksalt structure; a first electrode film layer having a crystallographic texture acting as a template; and at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the first electrode film layer whereby the rocksalt structure of the textured layer facilitates the growth of the first electrode film layer with a {100} orientation which forms a template for the epitaxial deposition of the ferroelectric layer such that the ferroelectric layer is formed with an {001} orientation.Type: ApplicationFiled: June 5, 2012Publication date: April 18, 2013Applicant: U.S. Government as represented by the Secretary of the ArmyInventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka
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Patent number: 7344939Abstract: Ferroelectric memory cells (3) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell (3) is not being accessed while avoiding significant disruption of memory cell access operations. Methods (100, 200) are provided for fabricating ferroelectric memory cells (3) and ferroelectric capacitors (C), in which a parallel resistance (R) is integrated in the capacitor ferroelectric material (20) or in an encapsulation layer (46) formed over the patterned capacitor structure (C).Type: GrantFiled: December 7, 2006Date of Patent: March 18, 2008Assignee: Texas Instruments IncorporatedInventors: Jarrod Randall Eliason, Glen R. Fox, Richard A. Bailey
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Patent number: 7180141Abstract: Ferroelectric memory cells (3) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell (3) is not being accessed while avoiding significant disruption of memory cell access operations. Methods (100, 200) are provided for fabricating ferroelectric memory cells (3) and ferroelectric capacitors (C), in which a parallel resistance (R) is integrated in the capacitor ferroelectric material (20) or in an encapsulation layer (46) formed over the patterned capacitor structure (C).Type: GrantFiled: December 3, 2004Date of Patent: February 20, 2007Assignee: Texas Instruments IncorporatedInventors: Jarrod Randall Eliason, Glen R. Fox, Richard A. Bailey
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Patent number: 6964873Abstract: A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.Type: GrantFiled: April 17, 2000Date of Patent: November 15, 2005Assignee: Fujitsu LimitedInventors: Katsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep
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Patent number: 6682772Abstract: A platinum deposition method uses a combination of an oxide adhesion layer and a high temperature thin film deposition process to produce platinum bottom electrodes for ferroelectric capacitors. The platinum bottom electrode is deposited onto a TiOx layer at temperatures between about 300 and 800° C. Deposition at high temperatures changes the platinum stress from compressive to tensile, increases platinum grain size, and provides a more thermally stable substrate for subsequent PZT deposition.Type: GrantFiled: April 24, 2000Date of Patent: January 27, 2004Assignees: Ramtron International Corporation, Ulvac Japan, Ltd.Inventors: Glen R. Fox, KouKou Suu
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Publication number: 20020177243Abstract: A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.Type: ApplicationFiled: April 17, 2000Publication date: November 28, 2002Inventors: Katsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep
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Publication number: 20020142489Abstract: A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.Type: ApplicationFiled: January 4, 2002Publication date: October 3, 2002Inventors: Katsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep