Patents by Inventor Glen Richard Fox

Glen Richard Fox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric mechanical memory based on remanent displacement and method
    Patent number: 10043565
    Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: August 7, 2018
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Glen Richard Fox, Jeffrey S. Pulskamp, Ronald G. Polcawich
  • Ferroelectric Mechanical Memory Based on Remanent Displacement and Method
    Publication number: 20160276014
    Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.
    Type: Application
    Filed: April 18, 2016
    Publication date: September 22, 2016
    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
    Inventors: Glen Richard Fox, Jeffrey S. Pulskamp, Ronald G. Polcawich