Abstract: A luminescent solar concentrator apparatus includes an optically transparent substrate and a photovoltaic material layer at least partially embedded within an optically transparent encapsulant material layer that contacts the optically transparent substrate. A luminescent material layer also contacts the optically transparent encapsulant material layer. Generally, the luminescent solar concentrator apparatus provides that the luminescent material layer is not located within an incoming optical pathway through at least the optically transparent substrate to the photovoltaic material layer.

Abstract: The present invention provides methods of selectively depositing refractory metal and metal nitride cap layers onto copper lines inlaid in a dielectric layer. The methods result in formation of a cap layer on the copper lines without significant formation on the surrounding dielectric material. The methods typically involve exposing the copper lines to a nitrogen-containing organo-metallic precursor and a reducing agent under conditions that the metal or metal nitride layer is selectively deposited. In a particular embodiment, an amino-containing tungsten precursor is used to deposit a tungsten nitride layer. Deposition methods such as CVD or ALD may be used.

Abstract: Functionalized nanoparticles are deposited on metal lines inlaid in dielectric to form a metal cap layer that reduces electromigration in the metal line. The functionalized nanoparticles are deposited onto activated metal surfaces, then sintered and annealed to remove the functional agents leaving behind a continuous capping layer. The resulting cap layer is about 1 to 10 nm thick with 30-100% atomic of the nanoparticle material. Various semiconductor processing tools may be adapted for this deposition process without adding footprint in the semiconductor fabrication plant.

Abstract: Functionalized nanoparticles are deposited on metal lines inlaid in dielectric to form a metal cap layer that reduces electromigration in the metal line. The functionalized nanoparticles are deposited onto activated metal surfaces, then sintered and annealed to remove the functional agents leaving behind a continuous capping layer. The resulting cap layer is about 1 to 10 nm thick with 30-100% atomic of the nanoparticle material. Various semiconductor processing tools may be adapted for this deposition process without adding footprint in the semiconductor fabrication plant.