Abstract: A semiconductor device having copper interconnecting metallization (111) protected by a first (102) and a second (120) overcoat layer (homogeneous silicon dioxide), portions of the metallization exposed in a window (103) opened through the thicknesses of the first and second overcoat layers. A patterned conductive barrier layer (130) is positioned on the exposed portion of the copper metallization and on portions of the second overcoat layer surrounding the window. A bondable metal layer (150) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A third overcoat layer (160) consist of a homogeneous silicon nitride compound is positioned on the second overcoat layer so that the ledge (162, more than 500 nm high) of the third overcoat layer overlays the edge (150b) of the bondable metal layer. The resulting contoured chip surface improves the adhesion to plastic device encapsulation.

Abstract: A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel suicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.

Abstract: The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again.

Abstract: The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and second substrates are consecutively inserted into the first process chamber and generally simultaneously processed, wherein the oxidized region is reduced by exposure to a first plasma. The first and second substrates are then consecutively removed and the first substrate is inserted into a second process chamber and subsequently processed. The second substrate is then inserted into the second process chamber and the first and second substrates are simultaneously processed. The first substrate is the removed, and the second substrate is processed again.

Abstract: A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel suicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.

Abstract: Techniques for synthesizing diamond films include a method for anisotropically etching a diamond film. The method includes the steps of selectively patterning a mask layer on a surface of a diamond film and then subjecting the mask layer and exposed surface portions of the diamond film to a hydrogen-containing plasma, while negatively biasing the diamond film to convert the exposed surface portions of the diamond layer to nondiamond carbon. Negatively biasing the diamond film in the hydrogen-containing plasma causes an emission of electrons to thereby convert exposed diamond surface portions to nondiamond carbon. The hydrogen-containing plasma continuously removes the nondiamond carbon from the surface and maintains the electron emission efficiency of the exposed diamond surface so that further etching can take place.

Abstract: A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.