Patents by Inventor Glenn T. Hess

Glenn T. Hess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monolithic Nuclear Event Detector and Method of Manufacture
    Publication number: 20110316105
    Abstract: A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in either a p-, intrinsic, or n-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.
    Type: Application
    Filed: November 18, 2010
    Publication date: December 29, 2011
    Inventors: Thomas J. Sanders, Nicolaas W. Van Vonno, Clyde Combs, Glenn T. Hess
  • Monolithic nuclear event detector and method of manufacture
    Patent number: 7858425
    Abstract: A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: December 28, 2010
    Inventors: Thomas J. Sanders, Nicolaas W. Van Vonno, Clyde Combs, Glenn T. Hess
  • Monolithic nuclear event detector and method of manufacture
    Publication number: 20080290433
    Abstract: A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p- substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.
    Type: Application
    Filed: May 21, 2008
    Publication date: November 27, 2008
    Inventors: Thomas J. Sanders, Nicolaas W. Van Vonno, Clyde Combs, Glenn T. Hess