Patents by Inventor Glenn Walton Gale

Glenn Walton Gale has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capillary dry process and apparatus
    Patent number: 6565666
    Abstract: Disclosed is a method of removing liquid from a surface of a semiconductor wafer that comprises the steps of providing a plurality of capillary channels, each said capillary channel having a first opening and a second opening, and then placing said first openings in contact with the liquid in a manner effective in drawing away the liquid by capillary action.
    Type: Grant
    Filed: November 27, 2000
    Date of Patent: May 20, 2003
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Kenneth T. Settlemyer, Jr., William A. Syverson
  • Method of drying substrates
    Patent number: 6508014
    Abstract: A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: January 21, 2003
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, James Willard Hannah, Kenneth T. Settlemyer, Jr.
  • Method of drying substrates
    Publication number: 20020112369
    Abstract: A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.
    Type: Application
    Filed: February 16, 2001
    Publication date: August 22, 2002
    Applicant: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, James Willard Hannah, Kenneth T. Settlemyer
  • Process for treating a semiconductor substrate
    Patent number: 6354309
    Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: March 12, 2002
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
  • Process for treating a semiconductor substrate
    Patent number: 6173720
    Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: January 16, 2001
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich