Patents by Inventor Gloria E. Hofler
Gloria E. Hofler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8415694Abstract: A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.Type: GrantFiled: February 23, 2010Date of Patent: April 9, 2013Assignee: Philips Lumileds Lighting Company LLCInventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
-
Patent number: 8049234Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.Type: GrantFiled: October 8, 2007Date of Patent: November 1, 2011Assignee: Philips Lumileds Lighting Company LLCInventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
-
Publication number: 20100148151Abstract: A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.Type: ApplicationFiled: February 23, 2010Publication date: June 17, 2010Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
-
Patent number: 7279345Abstract: A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.Type: GrantFiled: September 10, 2004Date of Patent: October 9, 2007Assignee: Philips Lumileds Lighting Company, LLCInventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
-
Patent number: 7196536Abstract: Methods and apparatus for non-contact electrical probes are described. In accordance with the invention, non-contact electrical probes use negative or positive corona discharge. Non-contact electrical probes are suited for testing of OLED flat panel displays.Type: GrantFiled: August 2, 2004Date of Patent: March 27, 2007Assignee: Agilent Technologies, Inc.Inventors: Michael J. Nystrom, Gloria E. Hofler
-
Patent number: 7087941Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.Type: GrantFiled: November 5, 2001Date of Patent: August 8, 2006Assignee: Philips Lumileds Lighting Company, LLCInventors: Nathan F. Gardner, Fred A. Kish, Herman C. Chui, Stephen A. Stockman, Michael R. Krames, Gloria E. Hofler, Christopher Kocot, Nicolas J. Moll, Tun-Sein Tan
-
Patent number: 7064355Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection.Type: GrantFiled: June 12, 2001Date of Patent: June 20, 2006Assignee: Lumileds Lighting U.S., LLCInventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
-
Patent number: 6987613Abstract: Provided is a light emitting device including a Fresnel lens and/or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an optical element stamped on a surface for improved light extraction and the stamping method used to form such device. An optical element formed on the surface of a semiconductor light emitter reduces reflective loss and loss due to total internal reflection, thereby improving light extraction efficiency. A Fresnel lens or a holographic diffuser may be formed on a surface by wet chemical etching or dry etching techniques, such as plasma etching, reactive ion etching, and chemically-assisted ion beam etching, optionally in conjunction with a lithographic technique. In addition, a Fresnel lens or a holographic diffuser may be milled, scribed, or ablated into the surface.Type: GrantFiled: March 30, 2001Date of Patent: January 17, 2006Assignee: Lumileds Lighting U.S., LLCInventors: Douglas W. Pocius, Michael D. Camras, Gloria E. Hofler
-
Publication number: 20020141006Abstract: Provided is a light emitting device including a Fresnel lens and/or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an optical element stamped on a surface for improved light extraction and the stamping method used to form such device. An optical element formed on the surface of a semiconductor light emitter reduces reflective loss and loss due to total internal reflection, thereby improving light extraction efficiency. A Fresnel lens or a holographic diffuser may be formed on a surface by wet chemical etching or dry etching techniques, such as plasma etching, reactive ion etching, and chemically-assisted ion beam etching, optionally in conjunction with a lithographic technique. In addition, a Fresnel lens or a holographic diffuser may be milled, scribed, or ablated into the surface.Type: ApplicationFiled: March 30, 2001Publication date: October 3, 2002Inventors: Douglas W. Pocius, Michael D. Camras, Gloria E. Hofler
-
Publication number: 20020127751Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.Type: ApplicationFiled: November 5, 2001Publication date: September 12, 2002Inventors: Nathan F. Gardner, Fred A. Kish, Herman C. Chui, Stephen A. Stockman, Michael R. Krames, Gloria E. Hofler, Christopher Kocot, Nicolas J. Moll, Tun-Sein Tan
-
Publication number: 20020030194Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection.Type: ApplicationFiled: June 12, 2001Publication date: March 14, 2002Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler
-
Publication number: 20010020703Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.Type: ApplicationFiled: July 24, 1998Publication date: September 13, 2001Inventors: NATHAN F. GARDNER, FRED A. KISH, HERMAN C. CHUI, STEPHEN A. STOCKMAN, MICHAEL R. KRAMES, GLORIA E. HOFLER, CHRISTOPHER KOCOT, NICOLAS J. MOLL