Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.

Abstract: A semiconductor device, such as a laser, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, an etching stop layer disposed over the substrate, and an active region layer disposed on the etching stop layer. The active region layer is further disposed opposite the substrate.

Abstract: A probe is locatable adjacent a selected region of a device under test (DUT), the selected region having a plurality of contacts. A generator is capable of establishing a plume of a ionized gas between the probe and the selected region of the DUT, the plume having sufficient cross-sectional area and electrical conductivity to complete an electrical connection between the probe and the plurality of contacts.

Abstract: Doped diffraction gratings for use in quantum cascade lasers and mid-infrared wavelength vertical cavity surface emitting lasers can be made by introducing periodic variations in the doping levels that result in periodic refractive index variations. Doping is typically accomplished by use of an n type dopant.

Abstract: There is disclosed a contactless test probe using an ionized gas discharge for making electrical contact with the device under test (DUT). In one embodiment the ionized gas discharge is at or below atmospheric pressure thereby reducing the complexity of the control environment. In one embodiment, the atmospheric gas discharge, i.e. the electrical probing medium, is created and controlled by a micro-hollow cathode. In a further embodiment an extension gate is used to extend/retard the range of the high-density discharge.

Abstract: Methods and apparatus for non-contact electrical probes are described. In accordance with the invention, non-contact electrical probes use negative or positive corona discharge. Non-contact electrical probes are suited for testing of OLED flat panel displays.

Abstract: A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.

Abstract: A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV).

Abstract: A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV).

Abstract: A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV).