Abstract: Embodiments of the invention include an optical fiber laser system with a cascaded Raman resonator (CRR) or other suitable Raman frequency shifting device having a length of optical fiber with at least one input pump reflector, a series of Raman-Stokes order reflectors and an output reflector therein. The reflectors are written to provide sufficient conversion efficiency despite the use of the cascaded Raman resonator with differing pump laser wavelengths. The reflectors are written not necessarily in correspondence with the gain maxima of the intermediate Stokes orders, but instead are written to reflect with less than maximum gain conversion intensity, yet in a manner that allows different pump laser wavelengths to be converted thereby. When operating the cascaded Raman resonators at sufficiently high pump powers, input pump reflectors are not necessary. Cascaded Raman resonators designed in accordance with embodiments of the invention are useful with different pump laser wavelengths.

Abstract: A multi-wavelength Raman radiation source is disclosed. The source receives pump radiation at a given wavelength, e.g., 1100 nm, and has outputs at two or more longer wavelengths, e.g., 1450 nm and 1480 nm. The cascaded Raman resonator comprises, for each desired output wavelength, an optical cavity formed by a high reflectivity grating and a low reflectivity grating, with both having the same center wavelength, equal to the desired output wavelength. Multi-wavelength Raman radiation sources have a variety of applications, e.g., they can advantageously be used in a remotely pumped optical fiber communication system.

Abstract: Multistage Er-doped fiber amplifiers (EDFAs) advantageously use high numerical aperture (NA) fiber in the input stage, and low NA fiber in the output stage. The former typically is greater than 0.25, and the latter is less than 0.20. Such amplifiers can have high gain and low noise figure.

Abstract: A 980 nm pump, for use with an erbium-doped fiber amplifier, provides redundancy together with simultaneous pumping, both co-propagating and counter-propagating, relative to 1550 nm signal, without need for an isolator.

Abstract: Extended wavelength tunability is achieved in a saturable absorber for applications such as modelocking lasers by realizing a semiconductor structure having a tapered energy bandgap profile in a portion of the saturable absorber wherein the profile is given as a function of the distance along the propagation axis of the saturable absorber. For certain applications, at least one mirror is monolithically integrated with the saturable absorber.