Abstract: A semiconductor device package includes a substrate with one or more pads and at least one semiconductor device that has one or more of its electrodes electrically connected to the substrate pads. The package also includes one or more terminals in electrical connection with the substrate pads and that provide for external connection to the device.

Abstract: A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.

Abstract: A device package includes at least one semiconductor device having at least one electrode of an elongated length. The device package also includes at least one conductive pad that extends parallel to the elongated length of the electrode. A terminal lead may be integral with the conductive pad. A plurality of wirebonds of about the same length may electrically connect the conductive pad and the elongated electrode of the semiconductor device. As another alternative, a second semiconductor device may be mounted to the conductive pad and a plurality of wirebonds may electrically connect this second device and the elongated electrode of the first semiconductor device.

Abstract: A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Abstract: A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

Abstract: A power module having a lead frame with a plurality of power switching devices and a plurality of driving devices mounted thereon. The driving devices control the power switching devices to provide power to a plurality of output leads via first wire bonds. The first wire bonds are substantially parallel to each other between the power switching devices and the output leads. Each power switching device preferably includes a power semiconductor device and a diode, the diodes and power switching devices being interconnected by second wire bonds which are also substantially parallel to each other. The power switching devices preferably comprise bare semiconductor die mounted on the lead frame, the lead frame and power switching devices being enclosed in a molded package. The molded package are preferably formed by transfer-molding or injection-molding.

Abstract: A semiconductor device package has a lead frame with four or more die receiving pads. The first pad is large enough to receive two or more of the die, laterally spaced from one another, while the other pads receive at least one die each. The die may be arranged in a single straight path, or in spaced parallel paths. The tops of selected ones of the die are bonded to lead frame elements of adjacent pads to complete bridge type circuits within the package. The die and pads are enclosed by a molded plastic housing and short sections of the pads protrude through the housing wall.

Abstract: A semiconductor device package has a lead frame with four or more die receiving pads. The first pad is large enough to receive two or more of the die, laterally spaced from one another, while the other pads receive at least one die each. The die may be arranged in a single straight path, or in spaced parallel paths. The tops of selected ones of the die are bonded to lead frame elements of adjacent pads to complete bridge type circuits within the package. The die and pads are enclosed by a molded plastic housing and short sections of the pads protrude through the housing wall.