Abstract: [Problem] To provide a film forming composition and a film forming method capable of forming a film excellent in gas barrier properties. [Means for Solution] A film forming composition comprising a polysilazane, an organic solvent and an additive having a specific structure, and a film forming method comprising applying the composition on a substrate and exposing the composition to light. This specific additive is represented by a specific general formula among those having a nonconjugated cyclic structure composed of atoms selected from the group consisting of carbon, nitrogen and oxygen in the structure.

Abstract: [Problem] To provide a film forming composition curable at low temperature and a film forming method using the same. [Means for Solution] A film forming composition comprising a polysilazane, an organic solvent and aspecific additive, and a film forming method comprising applying it on a substrate and curing. The specific additive is selected from the group consisting of (A) guanidines substituted by a hydrocarbylgroup, (B) crown ether amines containing oxygen and nitrogen as a member thereof, (C) cycloalkanes having an amino-substituted polycyclic structure, (D) oximes substituted by a hydrocarbyl group, and (E) imidazolines.

Abstract: [Problem] To provide a film forming composition and a film forming method capable of forming a film excellent in gas barrier properties. [Means for Solution] A film forming composition comprising a polysilazane, an organic solvent and an additive having a specific structure, and a film forming method comprising applying the composition on a substrate and exposing the composition to light. This specific additive is represented by a specific general formula among those having a nonconjugated cyclic structure composed of atoms selected from the group consisting of carbon, nitrogen and oxygen in the structure.

Abstract: [Problem] To provide a film forming composition curable at low temperature and a film forming method using the same. [Means for Solution] A film forming composition comprising a polysilazane, an organic solvent and aspecific additive, and a film forming method comprising applying it on a substrate and curing. The specific additive is selected from the group consisting of (A) guanidines substituted by a hydrocarbylgroup, (B) crown ether amines containing oxygen and nitrogen as a member thereof, (C) cycloalkanes having an amino-substituted polycyclic structure, (D) oximes substituted by a hydrocarbyl group, and (E) imidazolines.

Abstract: [Problem] To provide a composition for an underlayer, which can form an underlayer having flattened surface. [Means for Solution] A composition for forming an underlayer, comprising a polymer having a repeating unit containing nitrogen and a solvent. An underlayer is formed by coating this composition on a substrate, preferably baking in an inert atmosphere, and then baking in the air containing oxygen.

Abstract: To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. Disclosed is a composition for gap formation comprising a polymer and a solvent: wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2): Ar1-L1??(1) Ar2-L2-Ar2???(2) [each of Ar1, Ar2 and Ar2? is independently a substituted or unsubstituted aromatic group; and each of L1 and L2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3): {Ar3 is an aromatic group; and L3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].

Abstract: The present invention relates to a polymer, composition, the forming of a sacrificial layer and a method for producing a semiconductor device comprising a step during which a pattern is made using a photoresist by the photolithography method.

Abstract: [Problem] To provide a composition for an underlayer, which can form an underlayer having flattened surface. [Means for Solution] A composition for forming an underlayer, comprising a polymer having a repeating unit containing nitrogen and a solvent. An underlayer is formed by coating this composition on a substrate, preferably baking in an inert atmosphere, and then baking in the air containing oxygen.

Abstract: [Problem] To provide such a composition for producing a sacrifice layer as has excellent properties in both heat resistance and storage stability, and also to provide a process for producing a semiconductor device using the composition. [Solution] Disclosed is a composition for producing a sacrifice layer. The composition comprises a solvent and a polymer having a repeating unit containing a nitrogen atom with a lone pair, and contains particular transition metals only in a very low content. Also disclosed is a process using the composition as a sacrificial material for producing a semiconductor device comprising a porous material.

Abstract: [Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composition for gap formation comprising a polymer and a solvent: wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2): ?Ar1-L1???(1) ?Ar2-L2-Ar2????(2) [each of Ar1, Ar2 and Ar2? is independently a substituted or unsubstituted aromatic group; and each of L1 and L2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3): {Ar3 is an aromatic group; and L3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].

Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.

Abstract: The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.

Abstract: [Object] To provide a composition for forming a tungsten oxide film from an aqueous solution, and also to provide a pattern formation method employing that composition. [Means] The present invention provides a tungsten oxide film-forming composition comprising: water, a water-soluble metatungstate, and at least one additive selected from the group consisting of anionic polymers, nonionic polymers, anionic surfactants, and tertiary amino group-containing nonionic surfactants. For forming a pattern, this composition can be employed in place of a silicon dioxide film-forming composition in a pattern formation process using an image reversal trilayer structure, a resist undercoat layer or a resist top protective film.

Abstract: The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

Abstract: [Object] To provide a composition for forming a tungsten oxide film from an aqueous solution, and also to provide a pattern formation method employing that composition. [Means] The present invention provides a tungsten oxide film-forming composition comprising: water, a water-soluble metatungstate, and at least one additive selected from the group consisting of anionic polymers, nonionic polymers, anionic surfactants, and tertiary amino group-containing nonionic surfactants. For forming a pattern, this composition can be employed in place of a silicon dioxide film-forming composition in a pattern formation process using an image reversal trilayer structure, a resist undercoat layer or a resist top protective film.

Abstract: Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X? represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.

Abstract: There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity. The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

Abstract: The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.

Abstract: The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.