Abstract: An apparatus deposits carbon-containing structures on a substrate conveyed through an interior space of a housing. The interior space has a central zone between a first peripheral zone and a second peripheral zone. The substrate enters the housing through a first opening of the housing, passes through the first peripheral zone, central zone, and second peripheral zone, and leaves the housing through a second opening of the housing. The second peripheral zone has a gas inlet with a gas outlet opening that feeds a carbon-containing process gas into the housing. The housing has a heating device partially disposed in the central region for thermally activating the process gas. A pump evacuates gas from the interior space through a gas outlet. Means are provided for the controlled entry of a reactive gas into the first and second peripheral zones.

Abstract: A device for transporting a strip-type substrate through a reactor includes transport elements for holding the substrate. The transport elements are displaceable by a drive unit in a transport direction. The transport elements have first transport beams and second transport beams that engage in alternation on the substrate, in which the transport beams that engage the substrate move in the transport direction and the transport beams that do not engage the substrate move in a reverse direction opposite to the transport direction. The device further includes transport carriages that are arranged in pairs in the transport direction respectively upstream and downstream of the reactor.

Abstract: A phosphorescent ink comprises a first solvent, a stabiliser and a first phosphorescent metal complex wherein the first phosphorescent metal complex comprises at least one aryl-imidazole or heteroaryl-imidazole ligand that may be unsubstituted or substituted with one or more substituents and wherein the solvent is selected from: linear, branched or cyclic ethers comprising one or more O—CH2 units; solvents comprising a CH2—C(R6)H—CH2 unit wherein R6 is an organic residue and the two CH2 groups may be linked by a divalent group: bicyclic, partially or fully saturated solvents; solvents of formula R8—CR7?CR7—CH2—R8 wherein each R7 is independently H or C1-10 alkyl and R8 in each occurrence is independently an organic residue; and solvents comprising a benzyl group. The stabiliser may be an antioxidant. The ink may be used to form an organic light-emitting device.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.