Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

Abstract: In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.

Abstract: In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.