Abstract: An array substrate and a manufacturing method thereof are provided. A metal film layer is formed on an active layer of the array substrate. The metal film layer protects the active layer from being damaged by an etchant liquid or dry etching process during patterning processing of a source electrode/a drain electrode. Afterwards, a portion of the metal film layer that corresponds to a channel of the active layer the channel is subjected to oxidizing processing to form an oxide layer to help keep the functional property of the active layer. In the entire manufacturing process of the array substrate, the active layer will not be subject to damage in subsequent processing and stability of the device can be maintained.

Abstract: A thin film transistor structure, a gate driver on array (GOA) circuit and a display device are provided. The thin film transistor structure defines a plurality of thin film transistors by patterning an active layer. Therefore, when a defect appears in the gate insulating layer of one of the plurality of thin film transistors and a leakage path is formed, other thin film transistors will not be affected. Therefore, a problem of functional failure of a whole thin film transistor structure can be avoided.

Abstract: A TFT backplane and a micro-LED display are provided A metal light shielding layer is placed at the lower surface of the substrate and the position of the metal light shield layer is corresponding to the active layer. This reduces the size of the side frame, which is used when assembling multiple displays in a large-size micro LED display application. This could meet the demand of large-size micro-LED display. In addition, this could further reduce the steps of depositing and patterning a conventional shield metal layer in a convention process of manufacturing the TFT. Therefore, the manufacturing steps of the TFT backplane are simplified and thus the manufacturing cost is reduced.

Abstract: A thin film transistor structure, a gate driver on array (GOA) circuit and a display device are provided. The thin film transistor structure defines a plurality of thin film transistors by patterning an active layer. Therefore, when a defect appears in the gate insulating layer of one of the plurality of thin film transistors and a leakage path is formed, other thin film transistors will not be affected. Therefore, a problem of functional failure of a whole thin film transistor structure can be avoided.

Abstract: An array substrate, a method for manufacturing the same, and a display panel are provided. The array substrate includes a substrate, a first metal layer, a buffer layer, and a semiconductor layer. The first metal layer includes a source electrode, a drain electrode, and a light shielding portion. The semiconductor layer is electrically connected to the source electrode through a first via hole penetrating the buffer layer, and is electrically connected to the drain electrode through a second via hole penetrating the buffer layer. The source electrode, the drain electrode, and the light shielding portion can be formed by a same yellow light process, thereby reducing a number of photomasks and a number of process steps.

Abstract: The present invention discloses a thin film transistor (TFT) drive backplane and a Micro- light emitting diode (LED) display that by employing a structure of an oxide thin film transistor drive backplane with a high mobility can achieve fulfillment of the need for large size Micro-LED displays. Disposing the rear metal layer under the base substrate with the rear metal layer including a metal wire layer configured to connect with a drive chip and a metal light shielding layer configured to block ambient light reduces a spliced bezel of the display panel in application of large size Micro-LED displays, reduces depositing and patterning steps of the metal light shielding layer during manufacturing the thin film transistors and further reduces process steps of manufacturing a TFT drive backplane.

Abstract: A TFT backplane and a micro-LED display are provided A metal light shielding layer is placed at the lower surface of the substrate and the position of the metal light shield layer is corresponding to the active layer. This reduces the size of the side frame, which is used when assembling multiple displays in a large-size micro LED display application. This could meet the demand of large-size micro-LED display. In addition, this could further reduce the steps of depositing and patterning a conventional shield metal layer in a convention process of manufacturing the TFT. Therefore, the manufacturing steps of the TFT backplane are simplified and thus the manufacturing cost is reduced.

Abstract: The present invention discloses a TFT drive backplane and a Micro-LED display that by employing a structure of an oxide thin film transistor drive backplane with a high mobility can achieve fulfillment of the need for large size Micro-LED displays. Disposing the rear metal layer under the base substrate with the rear metal layer including a metal wire layer configured to connect with a drive chip and a metal light shielding layer configured to block ambient light reduces a spliced bezel of the display panel in application of large size Micro-LED displays, reduces depositing and patterning steps of the metal light shielding layer during manufacturing the thin film transistors and further reduce process steps of manufacturing a TFT drive backplane.