Abstract: Techniques are generally described herein related to filters including first operational transconductance amplifier (first OTA) and a second operational transconductance amplifier (second OTA). In some examples described herein, the first OTA and second OTA have substantially the same transconductance. The first and second OTAs can be configured to realize filters such as first-order all-pass filters, second-order all-pass filters, higher-order all-pass filters, and quadrature oscillators.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

Abstract: A novel method is described to create low-relief texture at a light-facing surface or a back surface of a photovoltaic cell. The peak-to-valley height and average peak-to-peak distance of the textured surface is less than about 1 microns, for example less than about 0.8 micron, for example about 0.5 microns or less. In a completed photovoltaic device, average reflectance for light having wavelength between 375 and 1010 nm at a light-facing surface with this texture is 6 percent or less, for example about 5 percent or less, in some instances about 3.5 percent. This texture is produced by forming an optional oxide layer at the surface, lightly buffing the surface, and etching with a crystallographically selective etch. Excellent texture may be produced by etching for as little as twelve minutes or less. Very little silicon, for example about 0.3 mg/cm2 or less, is lost at the textured surface during this etch.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

Abstract: Techniques are generally described herein related to filters including first operational transconductance amplifier (first OTA) and a second operational transconductance amplifier (second OTA). In some examples described herein, the first OTA and second OTA have substantially the same transconductance. The first and second OTAs can be configured to realize filters such as first-order all-pass filters, second-order all-pass filters, higher-order all-pass filters, and quadrature oscillators.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device.

Abstract: A semiconductor assembly is described with a thin metal oxide layer interposed between a transparent conductive oxide and an amorphous silicon layer, along with methods for making this structure. The metal oxide layer has a refractive index or range of refractive indices intermediate between that of the transparent conductive oxide and the amorphous silicon layer, and thus tends to reduce reflection at the interface. Such a layer can be used at the light-facing surface of a light-sensitive device such as a photovoltaic cell to maximize the amount of incident light entering the cell. Titanium oxide is a suitable metal oxide, and has a refractive index between those of silicon and of both indium tin oxide and aluminum-doped zinc oxide, two common transparent conductive oxides.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device.

Abstract: A novel method is described to create low-relief texture at a light-facing surface or a back surface of a photovoltaic cell. The peak-to-valley height and average peak-to-peak distance of the textured surface is less than about 1 microns, for example less than about 0.8 micron, for example about 0.5 microns or less. In a completed photovoltaic device, average reflectance for light having wavelength between 375 and 1010 nm at a light-facing surface with this texture is 6 percent or less, for example about 5 percent or less, in some instances about 3.5 percent. This texture is produced by forming an optional oxide layer at the surface, lightly buffing the surface, and etching with a crystallographically selective etch. Excellent texture may be produced by etching for as little as twelve minutes or less. Very little silicon, for example about 0.3 mg/cm2 or less, is lost at the textured surface during this etch.

Abstract: A smart polishing media assembly is provided, along with a polishing system and a method for using the same. In one embodiment, the smart polishing media assembly includes a memory device coupled to a polishing material. The polishing material may be in pad, web or belt form. The memory device generally stores at least one material information, historical use information, and/or conditioning information of the polishing material.

Abstract: A polishing article is described. The polishing article includes a linear polishing sheet having a linear transparent portion, wherein the linear transparent portion is formed from a material that has the flexibility to pass around a radius of about 2.5 inches without cracking.

Abstract: A method is described. The method includes supporting a polishing sheet having a polishing surface on a subpad having a recess formed therein, applying a vacuum to the recess sufficient to pull portions of the polishing sheet into the recess to induce a recess in the polishing surface, positioning a substrate in a carrier head over the recess in the polishing surface, and lifting the substrate away from the polishing surface while the substrate is positioned over the recess.

Abstract: A polishing article is described. The polishing article includes an elongated polishing layer, and a transparent carrier layer supporting the polishing layer, where the transparent carrier layer has a projection extending into an aperture in the polishing layer to provide a transparent window in the polishing layer.

Abstract: A polishing apparatus is described. The polishing apparatus includes a rotatable platen, a drive mechanism to incrementally advance a polishing sheet having a polishing surface in a linear direction across the platen, a subpad on the platen to support the polishing sheet, the subpad having a groove formed therein, and a vacuum source connected to the groove of the subpad and configured to apply a vacuum sufficient to pull portions of the polishing sheet into the groove of the subpad to induce a groove in the polishing surface.

Abstract: A method is described. The method includes contacting a non-solid material to a non-linear edge of a sheet of polishing material, and causing the non-solid material to solidify to form a window that contacts the non-linear edge of the polishing material.

Abstract: A polishing system is described. The polishing system includes a polishing layer, and a subpad supporting the polishing layer, where the subpad has a spiral groove formed therein.

Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.

Abstract: A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

Abstract: A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.