Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract: A powder bed additive layer manufacturing system includes a linear traversing re-coater and a build plate. The build plate is mounted for rotation relative to the re-coater on an axis extending through the build plate.

Abstract: 1. A powder bed additive layer manufacturing system including a linear traversing re-coater and a build plate characterised in that the build plate is mounted for rotation, relative to the re-coater or movement about an axis.

Abstract: This invention relates to microfluidic devices including a manifold arrangement (1) with a terminal output channel (5) and a via (6) for connecting the terminal output (5) to the extreme end (11) of the manifold (1). The via (6) and channel (5) together form a bleed outlet. The shape of the via is such that it will always overlap the extreme end of the manifold, irrespective of the expected variability in via to manifold alignment. Preferably the manifold has a generally rectangular cross-section.

Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract: 1. A powder bed additive layer manufacturing system including a linear traversing re-coater and a build plate characterised in that the build plate is mounted for rotation, relative to the re-coater or movement about an axis.

Abstract: This invention relates to a shutter for use in physical vapour deposition apparatus having a chamber. The shutter, generally indicated at 5, is located in a side housing 6 of the vacuum chamber 7, whilst sputtering is taking place. Once the substrate 2 is treated, the substrate is removed from the chamber and the shutter is brought in to an operative position above a wafer pedestal or support 1. The shutter is mounted on an arm 8 using a fixing boss 10, the arm and the boss being magnetically coupled.

Abstract: A sputter apparatus (10) includes a chamber (13a) housing a target (11), a work piece support (12) and a process area (14) between the target and the support. The apparatus further includes an inlet (24) for process gas and a pumping outlet (27) from the process area. The inlet substantially surrounds the support and the apparatus includes a pumping outlet separate from the inlet. The inlet is shielded from the process area.

Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.

Abstract: This invention relates to a shutter for use in physical vapour deposition apparatus having a chamber. The shutter, generally indicated at 5, is located in a side housing 6 of the vacuum chamber 7, whilst sputtering is taking place. Once the substrate 2 is treated, the substrate is removed from the chamber and the shutter is brought in to an operative position above a wafer pedestal or support 1. The shutter is mounted on an arm 8 using a fixing boss 10, the arm and the boss being magnetically coupled.

Abstract: A pedestal for mounting semiconductor fabrication equipment within a clean room. The pedestal includes a base frame sitting on a waffle slab and utility connections. The equipment can readily be connected to the utility connections when positioned on the pedestal. The utility connections are located at the periphery of or across part of a face of the pedestal to thereby define a service area within the periphery.

Abstract: A sputter apparatus (10) includes a chamber (13a) housing a target (11), a work piece support (12) and a process area (14) between the target and the support. The apparatus further includes an inlet (24) for process gas and a pumping outlet (27) from the process area. The inlet substantially surrounds the support and the apparatus includes a pumping outlet separate from the inlet. The inlet is shielded from the process area.

Abstract: This invention relates to an apparatus for depositing a layer of material on to a workpiece. The apparatus includes chamber 11, a sputter target 12, a wafer support 13, wafer transport aperture 14 and a wafer transport mechanism 15. The last delivers the wafers along a transport path 16. An annular shield 19 is disposed between the support 13 and the target 12 and lies in the wafer transport path 16. Pins 30 are provided to lift the annular shield out of the transport path 16.

Abstract: A Platen, generally indicated at (10), comprises a ceramic body (11) and a workpiece support surface (12) and a base (13). Embodied within the body (11) are an electrostatic chuck electrode (40), an RF electrode (15), a heater (16), a ground plane electrode (17), an embedded thermocouple (18), and a stainless steel support (19). This combination provides a platen which can be RF driven, but has a screen to prevent unwanted plasma beneath the platen. The chuck can also be utilized as an electrostatic chuck.