Abstract: A sequencer circuit is configured to generate control signals for on-die memory control circuitry. The control signals may include memory operation pulses for implementing operations on selected non-volatile memory cells embodied within the same die as the sequencer (and other on-die memory control circuitry). The timing, configuration, and/or duration of the memory control signals are defined in configuration data, which can be modified after the design and/or fabrication of the die and/or on-die memory circuitry. As such, the timing, configuration, and/or duration of the memory control signals generated by the sequencer may be manipulated after the design and/or fabrication of the die, sequencer, and other on-die memory control circuitry.

Abstract: A sequencer circuit is configured to generate control signals for on-die memory control circuitry. The control signals may include memory operation pulses for implementing operations on selected non-volatile memory cells embodied within the same die as the sequencer (and other on-die memory control circuitry). The timing, configuration, and/or duration of the memory control signals are defined in configuration data, which can be modified after the design and/or fabrication of the die and/or on-die memory circuitry. As such, the timing, configuration, and/or duration of the memory control signals generated by the sequencer may be manipulated after the design and/or fabrication of the die, sequencer, and other on-die memory control circuitry.