Abstract: A metal-only flat metasurface antenna is described. The antenna includes a pillbox beamformer combined with a metasurface structure provided by an array of non-resonant subwavelength unit elements having opening sizes that are strictly smaller than half of the guided-mode wavelength. The pillbox beamformer includes bottom and top parallel plate waveguides (PWPs) forming respective bottom and top cavities for propagation of the guided-mode. Bottom, middle and top metal plates form the two PWPs. Arranged at one end of the bottom and top PWPs is a respective parabolic structure. An all-metal horn structure is centrally arranged at a second end of the bottom PWP opposite the parabolic structure. According to one aspect, the horn structure includes a single feed port arranged at a focal point of the parabolic structure. According to another aspect, the horn structure includes two feed ports arranged at an offset of the focal point.

Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.

Abstract: A phase shifter comprising an actuator coupled to a dielectric. When the dielectric is inserted into the waveguide in response to actuation by the actuator, the phase velocity of the incoming electromagnetic wave is decreased, resulting in a phase shift of the electromagnetic wave. A desired phase shift and a low insertion loss can be controlled by positioning of the dielectric and engineering the permittivity of the dielectric.

Abstract: Low-loss terahertz switches with nanometer resolution positioning and feedback are disclosed. In one embodiment, the switch uses a U-bend waveguide surrounded by an electromagnetic band gap and is implemented in a fully metal-machined fashion in combination with a piezo-electric motor and an optical linear encoder. In another embodiment, the switch comprises a MEMS device.

Abstract: A waveguide based variable attenuator device including one or more attenuators each including a porous dielectric material; and a metal coating on the top of the dielectric material; and an actuator coupled to the attenuator. The actuator is configured to position, with nanometer resolution, the one or more attenuators in a waveguide configured and dimensioned to guide an electromagnetic wave having a frequency in a range of 100 gigahertz (GHz) to 1 terahertz (THz). The actuator controls at least one of a position or a volume of the one attenuator inserted in the waveguide to achieve a variable or pre-determined attenuation of the electromagnetic wave transmitted through waveguide.

Abstract: A phased array system comprising an array of antennas outputting or receiving electromagnetic radiation to or from a steerable direction, wherein the electromagnetic radiation is at submillimeter wavelengths. The system further comprises a plurality of waveguides outputting or receiving the signals to or from the antennas, each of the waveguides with individual phase tuning. The waveguides are configured and dimensioned to guide an electromagnetic wave comprising the signals having a frequency in a range of 100 gigahertz (GHz) to 1000 terahertz (THz). The system further comprises means for phase shifting the signal by means of shifting or varying one or more phases of the signals relative to one another so as to vary, steer, or scan a direction of the electromagnetic radiation.

Abstract: A phase shifter comprising an actuator coupled to a dielectric. When the dielectric is inserted into the waveguide in response to actuation by the actuator, the phase velocity of the incoming electromagnetic wave is decreased, resulting in a phase shift of the electromagnetic wave. A desired phase shift and a low insertion loss can be controlled by positioning of the dielectric and engineering the permittivity of the dielectric.

Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.

Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.

Abstract: A modulated MTS antenna including a metasurface fabricated from metallized cylinders on a ground plane. The antenna structure can be designed to operate in the Gigahertz or Terahertz frequency band and to have a well defined directivity. The MTS antenna may be micromachined out of a silicon wafer using deep reactive ion etching (DRIE).

Abstract: A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract: A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).

Abstract: A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

Abstract: A modulated MTS antenna including a metasurface fabricated from metallized cylinders on a ground plane. The antenna structure can be designed to operate in the Gigahertz or Terahertz frequency band and to have a well defined directivity. The MTS antenna may be micromachined out of a silicon wafer using deep reactive ion etching (DRIE).

Abstract: A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract: A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract: A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

Abstract: A system, method, device, and apparatus provide a dielectric waveguide splitter/bi-directional link. A dielectric substrate fabricated into a first Y-junction waveguide with a first port splitting into a first branch leading to a second port and a second branch leading to a third port. An angle between the first branch and the second branch is below ninety degrees (90°). The dielectric waveguide splitter enables millimeter-wave (mmWave) transmission between the first port and the second port while reducing feedback of the mmWave between the second and third port. Two Y-junction waveguides may be fabricated back-to-back to provide simultaneous bidirectional mmWave transmission at a single frequency.

Abstract: A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Abstract: A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).