Abstract: The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.

Abstract: The concepts described herein involve the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

Abstract: The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

Abstract: A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

Abstract: The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithogaphy, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.

Abstract: The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.

Abstract: A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

Abstract: The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithogaphy, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.

Abstract: A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

Abstract: The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithography, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.

Abstract: The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae perpendicular to the plane of the block copolymer film is required for most applications. The preferred method to achieve orientation is by heating. The present invention involves the use of polarity-switching top coats to control block copolymer thin film orientation by heating. The top coats can be spin coated onto block copolymer thin films from polar casting solvents and they change composition upon thermal annealing to become “neutral”. Top coats allow for the facile orientation control of block copolymers which would otherwise not be possible by heating alone.

Abstract: A system and method for recognition of images may include the use of alignment markers. The image recognized may be a pattern from an array, a character, a number, a shape, and/or irregular shapes. The pattern may be formed by elements in an array such as an identification marking and/or a sensor array. More particularly, the system and method relate to discriminating between images by accounting for the orientation of the image. The size and/or location of alignment markers may provide information about the orientation of an image. Information about the orientation of an image may reduce false recognitions. The system and method of image recognition may be used with identification markings, biosensors, micro-fluidic arrays, and/or optical character recognition systems.

Abstract: Disclosed herein is an automatic fluid dispensing method and system for dispensing fluid on the surface of a plate-like material, or substrate, including a semiconductor wafer for imprint lithography processes. The dispensing method uses fluid dispenser and a substrate stage that may generate relative lateral motions between a fluid dispenser tip a substrate. Also described herein are methods and devices for creating a planar surface on a substrate using a substantially unpatterned planar template.

Abstract: The present invention involves the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

Abstract: The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

Abstract: Random copolymer top coats are described that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films.

Abstract: The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithography, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.

Abstract: The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithography, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.

Abstract: A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

Abstract: The present invention relates to a method the synthesis and utilization of random, cross-linked, substituted polystyrene copolymers as polymeric cross-linked surface treatments (PXSTs) to control the orientation of physical features of a block copolymer deposited over the first copolymer. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.