Abstract: A method is disclosed for providing enhanced quantitative analysis of materials by a dual-laser Raman probe wherein the wavelengths of the lasers used to illuminate a target object are selected in a manner to improve and enhance the quantitative analysis performance of the Raman signals.

Abstract: A method is disclosed for providing enhanced quantitative analysis of materials by a dual-laser Raman probe wherein the wavelengths of the lasers used to illuminate a target object are selected in a manner to improve and enhance the quantitative analysis performance of the Raman signals.

Abstract: A method is disclosed for providing enhanced quantitative analysis of materials by a dual-laser Raman probe wherein the wavelengths of the lasers used to illuminate a target object are selected in a manner to improve and enhance the quantitative analysis performance of the Raman signals.

Abstract: A method is disclosed for providing enhanced quantitative analysis of materials by a dual-laser Raman probe wherein the wavelengths of the lasers used to illuminate a target object are selected in a manner to improve and enhance the quantitative analysis performance of the Raman signals.

Abstract: A method is disclosed for providing enhanced quantitative analysis of materials by a dual-laser Raman probe wherein the wavelengths of the lasers used to illuminate a target object are selected in a manner to improve and enhance the quantitative analysis performance of the Raman signals.

Abstract: A front-side or back-side illuminated variable current-voltage thermophotovoltaic device comprises a support substrate; isolation layers disposed on the support substrate; a plurality of cells disposed on the isolation layers, each of the cells including a base layer and an emitter layer; an insulating member disposed between each of the cells configured to isolate each cell from adjacent cells; an ohmic contact configured to connect each cell to another cell in series; and a spectral control device disposed on top of the cells and/or on the bottom surface of the support substrate.

Abstract: A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

Abstract: A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV<E.sub.g <0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers.

Abstract: A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer.

Abstract: A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).