Patents by Inventor Gregory Breyta
Gregory Breyta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7300739Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.Type: GrantFiled: May 29, 2003Date of Patent: November 27, 2007Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Joe Brock, Richard A. DiPietro, David R. Medeiros, Ratnam Sooriyakumaran
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Patent number: 7297811Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ?,?-unsaturated esters. The fluoroalkanol-substituted ?,?-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.Type: GrantFiled: December 4, 2003Date of Patent: November 20, 2007Assignee: International Business Machines CorporationInventors: Gregory Breyta, Richard Anthony DiPietro, Daniel Joseph Dawson
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Publication number: 20070259274Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.Type: ApplicationFiled: June 20, 2007Publication date: November 8, 2007Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, David Medeiros, Ratnam Sooriyakumaran
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Patent number: 7193023Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: GrantFiled: December 4, 2003Date of Patent: March 20, 2007Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Joe Brock, Richard Anthony DiPietro, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory Michael Wallraff
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Publication number: 20070026339Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.Type: ApplicationFiled: May 29, 2003Publication date: February 1, 2007Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, David Medeiros, Ratnam Sooriyakumaran
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Patent number: 7135595Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: GrantFiled: January 12, 2006Date of Patent: November 14, 2006Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
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Publication number: 20060251989Abstract: A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.Type: ApplicationFiled: May 9, 2005Publication date: November 9, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Gregory Breyta, Daniel Dawson, Carl Larson, Gregory Wallraff
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Publication number: 20060128914Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: ApplicationFiled: January 12, 2006Publication date: June 15, 2006Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Debra Fenzel-Alexander, Carl Larson, David Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Patent number: 7014980Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: GrantFiled: August 12, 2004Date of Patent: March 21, 2006Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
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Publication number: 20060035167Abstract: A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.Type: ApplicationFiled: August 12, 2004Publication date: February 16, 2006Applicant: International Business Machines CorporationInventors: Marie Angelopoulos, Gregory Breyta, Wu-Song Huang, Robert Lang, Wenjie Li, David Medeiros, Wayne Moreau, Karen Petrillo
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Publication number: 20050130078Abstract: Method of plating using a polymeric barrier layer including a polyphenolic polymer which has a repeating unit of the formula: wherein R1, R2, R3, R4, and R5 are individually hydrogen, a hydroxy group or an azo dye.Type: ApplicationFiled: December 10, 2003Publication date: June 16, 2005Inventors: Daniel Bedell, Gregory Breyta, Tom Harris, April Hixson-Goldsmith, Murali Ramasubramanian, Alfred Renaldo, Benjamin Wang
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Publication number: 20050123852Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050124827Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ?,?-unsaturated esters. The fluoroalkanol-substituted ?,?-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Gregory Breyta, Richard DiPietro, Daniel Dawson
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Publication number: 20050124828Abstract: The invention provides alkene fluoroalkanol and fluorinated polyol precursors to fluoroalkanol-substituted ??-unsaturated esters. The fluoroalkanol-substituted ??-unsaturated esters are olefins that can be readily polymerized to provide fluoroalkanol-substituted polymers useful in lithographic photoresist compositions. Also provided are methods for synthesizing the alkene fluoroalkanol and fluorinated polyol precursors.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Gregory Breyta, Richard DiPietro, Daniel Dawson
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Publication number: 20050124774Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard Dipietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050019696Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: ApplicationFiled: August 12, 2004Publication date: January 27, 2005Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Debra Fenzel-Alexander, Carl Larson, David Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Patent number: 6806026Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: GrantFiled: May 31, 2002Date of Patent: October 19, 2004Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff
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Patent number: 6794110Abstract: A polymer blend is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the polymer blend is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including wavelengths of 157 nm, 193 nm and 248 nm, and has improved sensitivity and resolution. Processes for preparing and using the polymer blend are also provided, as are lithographic photoresist compositions that contain the polymer blend.Type: GrantFiled: March 4, 2002Date of Patent: September 21, 2004Assignee: International Business Machines CorporationInventors: Gregory Breyta, Hiroshi Ito, Hoa D. Truong
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Publication number: 20040103524Abstract: A read sensor for a magneto resistive head is formed through the use of a bilayer lift-off mask. According to one embodiment, a release layer is formed on top of a sensor layer. A silicon-containing resist layer is formed over the release layer. The resist layer is patterned according to the desired dimensions of the read sensor. Then, plasma etching, such as oxygen plasma etching, is used to remove the portion of the release layer that is exposed by removal of resist material. The release layer may be etched to undercut the patterned resist layer, or may entirely removed beneath the patterned resist layer to provide a bridge of the resist material. In either case, isotropic plasma etching, anisotropic plasma etching, or some combination thereof may be applied.Type: ApplicationFiled: December 2, 2002Publication date: June 3, 2004Inventors: Gregory Breyta, Mark Whitney Hart, Bulent Nihat Kurdi, Dennis Richard McKean, Alfred Floyd Renaldo, Douglas Johnson Werner
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Publication number: 20040048194Abstract: A tunable dielectric antireflective layer for use in photolithographic applications, and specifically, for use in an image transfer processing. The tunable dielectric antireflective layer provides a spin-on-glass (SOG) material that can act as both a hardmask and a deep UV antireflective layer (BARC). One such material is titanium oxide generated by spin-coating a titanium alkanate and curing the film by heat or electron beam. The material can be “tuned” to match index of refraction (n) with the index of refraction for the photoresist and also maintain a high absorbency value, k, at a specified wavelength. A unique character of the tunable dielectric antireflective layer is that the BARC/hardmask layer allows image transfer with deep ultraviolet photoresist.Type: ApplicationFiled: September 11, 2002Publication date: March 11, 2004Applicant: International Business Machines CorporationInventors: Gregory Breyta, Mark W. Hart, William D. Hinsberg, Alfred F. Renaldo