Abstract: Control circuits with energy recycling for envelope elimination and restoration and related methods are disclosed. A control circuit includes a filter module configured to condition an input power signal to provide an output power signal. An energy recapture module is electrically coupled to the filter module and is configured to capture a portion of residual energy from the filter module and return the portion of the residual energy to the input power signal. A control module is electrically coupled to the filter module and the energy recapture module and is configured to control the filter module to provide the output power signal and is further configured to control the energy recapture module to capture and return the portion of the residual energy to the input power signal.

Abstract: A bi-directional switch that includes a first terminal, a second terminal, and a plurality of ballast circuits is provided. Each ballast circuit includes a first metal-oxide-semiconductor field-effect transistor (MOSFET) comprising a first input connector, a first output connector, a first body, and a first body diode, and a second MOSFET comprising a second input connector, a second output connector, a second body, and a second body diode. Each first input connector is coupled to the first terminal, each second input connector is coupled to the second terminal, and each first output connector is coupled only to the second output connector of the second MOSFET that is in a same ballast circuit.

Abstract: An energy storage cell, or a plurality of energy storage cells assembled into an apparatus, are self-orienting relative to one or more adjacent energy storage cells. The energy storage cells are capable of sensing their polarity orientation of at least one other energy storage cell and self-orienting its own polarity responsive thereto. Thus, a method for self-orienting a subject energy storage cell includes: sensing the polarity of an adjacent energy storage cell; and setting the polarity of the subject energy storage cell responsive to the sensed polarity if the polarities of the adjacent energy storage cell and the subject energy storage cell are incompatible.

Abstract: A system is presented including a tube light mounted in a tube light socket. The tube light includes a printed wiring board, one or more LEDs mounted to the printed wiring board, and one or more sensors mounted to the printed wiring board. The tube light also includes a power supply mounted to the printed wiring board, such that the power supply is connected to the tube light socket to supply a direct current voltage signal to the printed wiring board. A method is also provided for forming the tube light and mounting the tube light into the tube light socket.

Abstract: A system is presented including a tube light mounted in a tube light socket. The tube light includes a printed wiring board, one or more LEDs mounted to the printed wiring board, and one or more sensors mounted to the printed wiring board. The tube light also includes a power supply mounted to the printed wiring board, such that the power supply is connected to the tube light socket to supply a direct current voltage signal to the printed wiring board. A method is also provided for forming the tube light and mounting the tube light into the tube light socket.

Abstract: Apparatus and methods for reducing output load transients of a low dropout voltage regulator (“LDO”) are disclosed herein. A voltage regulator includes an output driver coupled to a regulator output pin, the output driver provides current to a load external to the regulator. A clamping device is coupled between the output pin and an internal node of the regulator. The clamping device forces a voltage at a control input of the output driver to follow the voltage at the output pin when the output driver is disabled.

Abstract: Apparatus and methods for reducing output load transients of a low dropout voltage regulator (“LDO”) are disclosed herein. A voltage regulator includes an output driver coupled to a regulator output pin, the output driver provides current to a load external to the regulator. A clamping device is coupled between the output pin and an internal node of the regulator. The clamping device forces a voltage at a control input of the output driver to follow the voltage at the output pin when the output driver is disabled.

Abstract: The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

Abstract: The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.

Abstract: A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.

Abstract: A low current blow trim fuse structure and method of forming the trim fuse structure. Oxide steps are placed beneath a trim fuse during prior processing steps. The oxide steps will cause the metal (or polycrystal silicon (poly)) to thin at the point where the metal (or poly) transitions the step, and thus will reduce its cross-sectional area and current carrying capability, making it easier to program the fuse. The oxide steps will serve a further purpose in that, to some extent, it will thermally isolate the trim fuse, thereby causing local heating, making the fuse easier to blow.

Abstract: Trimming methods and apparatus are disclosed for selectively removing resistance between first and second nodes in an electrical device, including trim circuits comprising a resistor and a diode formed in the resistor body having a conductive portion which may be selectively melted to short the resistor. A multi-bit trim cell is disclosed having trim cells individually comprising a resistor with a diode formed in the resistor body for selectively shorting the resistor, and a fuse for selectively disconnecting the diode from a trim pad.

Abstract: A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.

Abstract: Trimming methods and apparatus are disclosed for selectively removing resistance between first and second nodes in an electrical device, including trim circuits comprising a resistor and a diode formed in the resistor body having a conductive portion which may be selectively melted to short the resistor. A multi-bit trim cell is disclosed having trim cells individually comprising a resistor with a diode formed in the resistor body for selectively shorting the resistor, and a fuse for selectively disconnecting the diode from a trim pad.

Abstract: A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.

Abstract: A low current blow trim fuse structure and method of forming the trim fuse structure. Oxide steps are placed beneath a trim fuse during prior processing steps. The oxide steps will cause the metal (or polycrystal silicon (poly)) to thin at the point where the metal (or poly) transitions the step, and thus will reduce its cross-sectional area and current carrying capability, making it easier to program the fuse. The oxide steps will serve a further purpose in that, to some extent, it will thermally isolate the trim fuse, thereby causing local heating, making the fuse easier to blow.

Abstract: An electrical device is disclosed, comprising electrical components forming an electrical circuit, with a trim circuit comprising two or more trim cells providing selectively removable resistances between first and second nodes in the electrical circuit. The resistance between the nodes is trimmed incrementally by application of trim signals to a single pair of terminals or pads on the device, allowing post-packaging trimming. Methods are also disclosed for selective removal of resistance between first and second nodes in a packaged electrical device.

Abstract: A low current blow trim fuse structure and method of forming the trim fuse structure. Oxide steps are placed beneath a trim fuse during prior processing steps. The oxide steps will cause the metal (or polycrystal silicon (poly)) to thin at the point where the metal (or poly) transitions the step, and thus will reduce its cross-sectional area and current carrying capability, making it easier to program the fuse. The oxide steps will serve a further purpose in that, to some extent, it will thermally isolate the trim fuse, thereby causing local heating, making the fuse easier to blow.