Abstract: Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam.

Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Abstract: A systematic in-situ analysis is provided for ensuring that a uniform and accurate ion implantation dose for workpieces is being realized. Prior to implantation the system determines whether the calibration of a dose controller is within predetermined tolerance values. If the dose controller is outside of these values, the implantation process is halted so that the calibration can be remedied without further damaging any workpieces by mis-dosing.

Abstract: Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam.