Abstract: A gas flow network in combination with a highly turbocharged diesel engine for the blending of either EGR gas or blow-by gas from the crankcase vent with fresh charge air is disclosed. In the diesel engine assembly which incorporates the flow network for EGR gas, a venturi conduit and control valve combination is positioned between tile intake manifold and aftercooler and is connected to a flow line carrying the EGR gas. When the turbocharged diesel engine assembly is configured with a flow path for blow-by gas, the venturi and control valve combination is positioned between the intake manifold and aftercooler and is connected to a flow line carrying blow-by gas. These systems utilize a low static pressure at the narrow throat of the venturi so as to induce the flow of EGR gas or blow-by gas into the fresh charge air, the flow being controlled by the state of the control valve.

Abstract: A crankcase ventilation system for a vehicle includes an arrangement of flow conduits and control valves which cooperate with a two-chamber accumulator and with various vehicle components to route crankcase gases to the intake manifold. The primary vehicle components include a compressor, an aftercooler positioned downstream from the compressor, and an engine having an intake manifold and a crankcase. One chamber of the accumulator is coupled by one conduit to the inlet side of the compressor and by a second conduit to the outlet side of the compressor. These two conduits are controlled by a dual valve arrangement. The other chamber of the accumulator is connected by one conduit to the crankcase and by a separate conduit to the intake manifold. Each conduit includes a control valve. The system operates on pressure differences existing between these various components. The cycle begins by opening the conduit which is connected to the inlet side of the compressor.

Abstract: A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer structure of semiconductor material includes a Fabry-Perot filter element for admitting electrons/holes at a first quasibound energy level above/below the conduction/valance band edge, and for depleting electrons/holes at a second quasibound energy level which is lower/higher than the first energy level. Such an arrangement allows common semiconductor material to be used to produce emitters and detectors and other devices which can operate at any of selected frequencies over a wide range of frequencies.