Abstract: Herein is disclosed a method and an apparatus for preparing a highly purified gas from a crude liquid comprising the gas and one or more of a metal, particulates, water vapor, or a volatile impurity. The method comprises: (a) vaporizing the crude liquid, to yield (i) a first vapor stream comprising the gas and (ii) a first liquid stream comprising the gas; (b) removing water vapor, particulates, or both from the first vapor stream, to yield a second vapor stream comprising the gas; (c) condensing the second vapor stream, to yield a second liquid stream comprising the gas; and (d) sparging the second liquid stream with an inert gas, to yield (i) a third vapor stream comprising the gas and (ii) a third liquid stream comprising the highly purified gas. Also disclosed is a method for preparing an adsorbent to effectively remove water vapor from the gas, as well as an adsorbent so prepared.

Abstract: Herein is disclosed a method for preparing an adsorbent to effectively remove water vapor during purification of a corrosive gas, as well as an adsorbent so prepared.

Abstract: A valve device that is securable to a cylinder includes a housing with a central passage in fluid communication with a first connection port that connects with a cylinder, and a second connection port including a passage that is in fluid communication with the central passage. The second connection port is configured to connect with a fluid flow line. A valve member is disposed within the second connection port and includes a movable member that engages with a seat to provide a fluid tight seal for the valve member in a closed position. The movable member is configured to be moved away from the seat so as to open the valve member and permit fluid to flow from the central passage of the valve housing around the movable member and through the second connection port while substantially preventing a backflow of fluids from a location external to the valve housing into the central passage.

Abstract: A gas mixing and delivery system includes a first gas supply vessel including a first gas stored at a first pressure, a second gas supply vessel including a second gas stored at a second pressure, and a mixing vessel connected to each of the first and second gas supply vessels. The system further includes a buffer tank connected to the mixing vessel to receive a gas mixture including the first and second gases delivered from the mixing vessel. The buffer tank is configured to connect with a process tool. The system is further configured to produce a gas mixture including the first and second gases by facilitating delivery of the first and second gases into the mixing vessel, mixing the first and second gases in the mixing vessel and delivering the gas mixture from the mixing vessel to the buffer tank via a forcing gas that is at a pressure greater than the first pressure.

Abstract: Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor compound includes germanium.

Abstract: A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R3, R4, R5 and R6 is independently selected from the group consisting of hydrogen and an alkyl group including at least two carbon atoms. The precursor is utilized to form a film on the substrate including at least one of aluminum oxide, aluminum nitride and aluminum oxy-nitride. Each of the R1-R6 groups can be the same or different and can by straight or branched chain alkyls. An exemplary precursor that has is useful in forming aluminum containing films is tris diethylamino aluminum.