Abstract: The specification describes a process for forming an organic optical waveguide device of predetermined planar geometry. First a layer of an organic photoactive composition (for example, phenylglyoxylic acid or a derivative thereof) is deposited to a predetermined thickness on a given substrate. The photoactive composition is characterized by being capable of forming a waveguiding material upon polymerization. Next, the deposited photoactive layer is exposed to a beam of ultraviolet radiation through a mask which defines the desired planar geometry for the device to be formed. Finally, the exposed photoactive layer is developed to leave behind a portion of the photoactive material which has the desired planar geometry and which is an organic waveguiding material.

Abstract: There is disclosed a class of integrated optics devices comprising a variety of optical elements such as waveguides, lenses, couplers and the like, and a method of fabrication thereof. In particular, there is disclosed an aberration-free geodesic lens for integrated optics devices. In these devices, photo-induced refractive index changes in chalcogenide glass films may be used to fabricate a radial index of refraction distribution profile in order to form a lens. By varying the exposure of the thin film to ultra-violet light, variable index of refraction profiles may be formed. The variable profile may itself form the lens or, preferably, a thin film may be deposited on an aspherical geodesic lens in order to provide correction of focal length, thus reducing the mechanical tolerances required in the grinding process. These devices thus permit a degree of freedom heretofore unobtained in thin film optical waveguides for use in such devices as a spectrum analyzer operating at the 0.9 to 1.

Abstract: The specification discloses a process for forming a graded index waveguide structure by first providing a substrate of a first selected optical material having a chosen index of refraction. Next, a patterned layer of a second optical material is formed on one surface of the substrate or, optionally, within selected cavities formed in the substrate. This second optical material has a refractive index which is larger than the refractive index of the substrate. The patterned layer of the second optical material is formed in a predetermined geometry and to a predetermined thickness. Then, a layer of a third selected optical material is formed on the patterned layer of the second optical material and on the substrate surface to a predetermined thickness. This third optical material has a refractive index which is substantially the same as the refractive index of the substrate.

Abstract: Alloys suitable for use in liquid metal field ionization ion sources are provided. Such sources include an anode electrode for supporting an ion emitter comprising an alloy in the liquid state. The source further comprises means for generating an ionizing electric field and a reservoir for the liquid metal, ions of which are to be emitted by the source.The alloys are selected from the group consisting of (a) metal-metalloid alloys comprising about 10 to 30 atom percent of at least one metalloid element, the balance at least one transition metal element, (b) early transition-late transition alloys comprising about 30 to 85 atom percent of at least one early transition metal, the balance at least one late transition metal, and (c) Group II alloys comprising about 35 to 80 atom percent of at least one Group II element, the balance at least one metal element.Ions generated in liquid metal ion sources form a high brightness ion beam, which permits focusing a beam of emitted ions to a submicrometer spot.

Abstract: A multi-mode optical fiber is used to detect electrical currents or magnetic fields from a remote source. The optical fiber, which serves as the sensor, is composited with metal capable of conducting electricity. Optical radiation is introduced into the fiber from a source which may be either coherent or incoherent. An electrical current is applied to the portion of the electrically conducting optical fiber and a magnetic field is applied to the current-carrying optical fiber. A known value of one permits a determination of the presence or absence of the other through electromotive forces on a metallic conductor in a magnetic field, which are used to induce differential phase shifts (coherent optical radiation input) or losses (incoherent optical radiation input) between the fiber modes. These phase shifts or losses are detected by a suitable detector. For a magnetic field of 1 kGauss, good linearity is obtained in the 5 to 2,000 mA current range. Magnetic fields of about 0.

Abstract: The specification describes a process for depositing a film of controlled composition on a substrate by using a metallo-organic photoresist in which the organic portion is combusted by heating in a reactive atmosphere to leave a residual deposit of a desired substance on the substrate. The film may be formed as a patterned or unpatterned layer. In addition, the residual deposit may be subsequently subjected to a chemical reaction to alter its composition.

Abstract: A coupler for wavelength multiplexing or demultiplexing of multimode optical signals in optical circuits. Light introduced through an input/output surface at one end of a planar optical waveguide formed within a glass substrate propagates to a convexly curved second end of the waveguide on which is contiguously mounted a flexible, reflective diffraction grating. The light is diffracted by the diffraction grating and focussed by the curved end back onto the first end of the waveguide.In a multiplexer (beam combiner) embodiment, a plurality of optical signal sources, each having a different wavelength component, is aligned along the first end of the waveguide so that light propagating from each of the sources travels through the waveguide to the reflective diffraction grating, is diffracted by the grating and then brought to a common focus at the first end. An optical fiber abutting the first end is positioned at the common focus to receive the combined beams.

Abstract: The specification describes a new and improved optical coupler which comprises (1) a substrate which is adapted to receive and reflect light, having formed therein and adjacent the major (or top) surface of the substrate an optical waveguiding structure comprising three interconnected light confining and propagating sections and (2) a light-reflecting or light-transmitting means. The first section of the waveguiding structure comprises a plurality of spaced-apart optical channel waveguides, each of which extends to a first minor surface of the substrate [which is perpendicular to the major (or top) surface of the substrate]. The second section of the waveguiding structure comprises a plurality of horn-shaped, tapered wave transition sections or regions which extend integrally from the channel waveguides and which are adjacently joined to each other at common points to form a multiple side-by-side horn-like configuration.

Abstract: A process for suppressing the out-diffusion of Li.sub.2 O from LiNbO.sub.3 and LiTaO.sub.3 waveguide structures by exposing the structures to a Li.sub.2 O-rich environment at sufficient vapor pressure that Li.sub.2 O diffuses into the structure as a compensation process and a solid-solid surface interaction occurs. In one embodiment of the invention, the out-diffusion of Li.sub.2 O from LiNbO.sub.3 and LiTaO.sub.3 crystals into which Ti has been diffused is eliminated by annealing the structure in a high purity powder of LiNbO.sub.3 or LiTaO.sub.3. In a second embodiment, the Li.sub.2 O out-diffusion is partially suppressed by annealing the structure in molten LiNO.sub.3. In a third embodiment of the invention, a waveguide structure comprising a Li.sub.2 O-rich guiding layer is formed by annealing LiNbO.sub.3 or LiTaO.sub.3 crystals in a high purity powder of LiNbO.sub.3 or LiTaO.sub.3, which not only suppresses Li.sub.2 O out-diffusion but also promotes Li.sub.2 O in-diffusion into the crystals.

Abstract: There is disclosed an integrated optical detector comprising a semiconductor substrate having an optical waveguide formed integrally therewith and a photodetector made from the same semiconductor material as the waveguide and integrally coupled to it. The detector region is sensitive to light of the same wavelengths that can be transmitted through the waveguide region of the semiconductor without excessive absorption therein by virtue of the fact that after the waveguide is formed proton bombardment of the detector portion thereof is used to create optically active defect centers thereby shifting the effective absorption edge in the detector region. Where gallium arsenide is used as the semiconductor defect levels induced by implantation of high energy protons give rise to optical absorption between 6 micron and 0.9 micron. This results in detector action in the presence of a Schottkey barrier depletion layer.