Patents by Inventor Gregory L. Wojcik

Gregory L. Wojcik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8369658
    Abstract: A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: February 5, 2013
    Inventors: Andrew P. Knights, Gregory L. Wojcik, Andreas Goebel, Dylan F. Logan, Paul E. Jessop
  • Patent number: 8023782
    Abstract: Methods and structures are disclosed demultiplexing optical signals transmitted over an optical fiber into a silicon substrate and to multiple detectors. The silicon substrate has two spaced-apart surfaces and a diffractive element disposed adjacent to one of the surfaces. Each of the optical signals corresponds to one of multiple wavelengths. The optical signals are directed into the silicon substrate along a path through the first surface to be incident on the diffractive element. The path is oriented generally normal with the first surface and/or with the diffractive element, which angularly separates the optical signals such that each of the wavelengths traverses through the substrate in a wavelength dependent direction to the first surface. Each optical signal is steered from the first surface towards the second surface to be incident on different optical elements that direct them generally normal to the first surface to be incident on one of the detectors.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: September 20, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Andreas Goebel, Lawrence C. West, Gregory L. Wojcik
  • Patent number: 7985689
    Abstract: Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.
    Type: Grant
    Filed: June 14, 2007
    Date of Patent: July 26, 2011
    Assignee: Applied Matrials, Inc.
    Inventors: Eric Perozziello, Thomas Joseph Kropewnicki, Gregory L. Wojcik, Andreas Goebel, Claes Bjorkman
  • Publication number: 20110091146
    Abstract: A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.
    Type: Application
    Filed: July 20, 2010
    Publication date: April 21, 2011
    Inventors: Andrew P. Knights, Gregory L. Wojcik, Andreas Goebel, Dylan F. Logan, Paul E. Jessop
  • Patent number: 7869672
    Abstract: An optical assembly is formed with a silicon substrate having a first surface and a second surface confronting the first surface. A reflective coating is formed over the first surface. Multiple diffraction gratings are formed integrally within the second surface of the silicon substrate. An optical absorber is formed over the second surface between the diffraction gratings.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: January 11, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Andreas Goebel, Lawrence C. West, Gregory L. Wojcik
  • Patent number: 7760980
    Abstract: A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: July 20, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Lawrence C. West, Gregory L. Wojcik, Francisco A. Leon, Yonah Cho, Andreas Goebel
  • Patent number: 7680376
    Abstract: Methods are disclosed of fabricating an optical assembly. An active optical element is disposed near or on a first surface of a slab of optical material. A passive optical element is formed on a second surface of the slab, with the second surface being substantially parallel to the first surface. An optical axis of the passive optical element is aligned with an optical path between the passive optical element and an active region of the active optical element using a lithographic alignment process.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: March 16, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Andreas Goebel, Gregory L. Wojcik, Lawrence C. West
  • Publication number: 20090269878
    Abstract: A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
    Type: Application
    Filed: April 8, 2009
    Publication date: October 29, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Francisco A. Leon, Lawrence C. West, Yuichi Wada, Gregory L. Wojcik, Stephen Moffatt
  • Publication number: 20090252495
    Abstract: Methods and structures are disclosed demultiplexing optical signals transmitted over an optical fiber into a silicon substrate and to multiple detectors. The silicon substrate has two spaced-apart surfaces and a diffractive element disposed adjacent to one of the surfaces. Each of the optical signals corresponds to one of multiple wavelengths. The optical signals are directed into the silicon substrate along a path through the first surface to be incident on the diffractive element. The path is oriented generally normal with the first surface and/or with the diffractive element, which angularly separates the optical signals such that each of the wavelengths traverses through the substrate in a wavelength dependent direction to the first surface. Each optical signal is steered from the first surface towards the second surface to be incident on different optical elements that direct them generally normal to the first surface to be incident on one of the detectors.
    Type: Application
    Filed: March 13, 2009
    Publication date: October 8, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Andreas Goebel, Lawrence C. West, Gregory L. Wojcik
  • Patent number: 7505647
    Abstract: Methods and structures are disclosed demultiplexing optical signals transmitted over an optical fiber into a silicon substrate and to multiple detectors. The silicon substrate has two spaced-apart surfaces and a diffractive element disposed adjacent to one of the surfaces. Each of the optical signals corresponds to one of multiple wavelengths. The optical signals are directed into the silicon substrate along a path through the first surface to be incident on the diffractive element. The path is oriented generally normal with the first surface and/or with the diffractive element, which angularly separates the optical signals such that each of the wavelengths traverses through the substrate in a wavelength dependent direction to the first surface. Each optical signal is steered from the first surface towards the second surface to be incident on different optical elements that direct them generally normal to the first surface to be incident on one of the detectors.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: March 17, 2009
    Assignee: Applied Amterials, Inc.
    Inventors: Andreas Goebel, Lawrence C. West, Gregory L. Wojcik
  • Publication number: 20080124084
    Abstract: An optical assembly is formed with a silicon substrate having a first surface and a second surface confronting the first surface. A reflective coating is formed over the first surface. Multiple diffraction gratings are formed integrally within the second surface of the silicon substrate. An optical absorber is formed over the second surface between the diffraction gratings.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 29, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Andreas Goebel, Lawrence C. West, Gregory L. Wojcik
  • Patent number: 7298941
    Abstract: An optoelectronic circuit including: an IC chip made up of a substrate in which an optical waveguide and a mirror have been fabricated, the substrate having a first lens formed thereon, wherein the mirror is aligned with the optical waveguide and the first lens is aligned with the mirror to form an optical path connecting the first lens, the mirror, and the optical waveguide; and an optical coupler including a second lens, the optical coupler affixed to the substrate and positioned to align the second lens with the first lens so as to couple an optical signal into or out of the optical waveguide within the IC chip.
    Type: Grant
    Filed: February 14, 2006
    Date of Patent: November 20, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Edward L. Palen, Gregory L. Wojcik, Lawrence C. West
  • Patent number: 7170142
    Abstract: A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium to be at or below said substrate surface, and at least one Schottky barrier electrode formed on the top surface of said waveguide medium and defining a Schottky barrier detector consisting of the electrode and the portion of the waveguide medium underlying the Schottky barrier electrode, at least the underlying portion of the waveguide medium being a semiconductor and defining an electrode-semiconductor interface parallel to the light propagation axis so that light of a predetermined wavelength from said waveguide medium propagates along the interface as a plasmon-polariton wave.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: January 30, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Gregory L. Wojcik, Lawrence C. West, Thomas P. Pearsall
  • Patent number: 7103079
    Abstract: A circuit for generating a clock or sampling signal, the circuit including: a semiconductor quantum dot laser element including a region of quantum dots, wherein the region of quantum dots is characterized by an emission distribution having a half-width of at least about 10 meV; and drive circuitry connected to the quantum dot laser element for operating the quantum dot laser element as a mode-locked laser that outputs a periodic, uniformly spaced sequence of pulses, wherein the clock or sampling signal is derived from the sequence of pulses.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: September 5, 2006
    Assignee: Applied Materials, Inc.
    Inventors: John G. McInerney, Gregory L. Wojcik, Lawrence C. West
  • Patent number: 7075165
    Abstract: A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: July 11, 2006
    Assignee: Applied Material, Inc.
    Inventors: Francisco A. Leon, Lawrence C. West, Yuichi Wada, Gregory L. Wojcik, Stephen Moffatt
  • Patent number: 7001788
    Abstract: A method of fabricating a waveguide mirror that involves etching a trench in a silicon substrate; depositing a film (e.g. silicon dioxide) over the surface of the silicon substrate and into the trench; ion etching the film to remove at least some of the deposited silicon dioxide and to leave a facet of film in inside corners of the trench; depositing a layer of SiGe over the substrate to fill up the trench; and planarizing the deposited SiGe to remove the SiGe from above the level of the trench.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: February 21, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Francisco A. Leon, Lawrence C. West, Gregory L. Wojcik, Yuichi Wada