Abstract: A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of secondary grooves (128, 404, 504) that become selectively active as a function of the wear of the polishing layer from polishing.

Abstract: The polishing pad is useful for polishing magnetic, optical and semiconductor substrates. The pad includes a polishing layer having a rotational center and an annular polishing track concentric with the rotational center and has a width. The width of the annular polishing track is free of non-radial grooves. And the pad has a plurality of radial micro-channels in the polishing layer within the width of the annular polishing track with a majority of the radial micro-channels having primarily a radial orientation and an average width less than 50 ?m.

Abstract: A polishing pad (104) having an annular polishing track (122) and including a plurality of grooves (148) that each traverse the polishing track. Each groove includes a plurality of flow control segments (CS1-CS3) and at least two discontinuities in slope (D1, D2) located within the polishing track.

Abstract: A polishing pad (104, 300) having an annular polishing track (152, 320) and a plurality of groups (160, 308) of grooves (112, 304) repeated circumferentially about the rotational center (128) of the pad. The plurality of grooves in each group are arranged along a trajectory (164, 312) in an offset and overlapping manner so as to provide a plurality of overlapping steps (172, 316) within the annular polishing track. The groups may be arranged in spaced-apart or nested relation with one another.

Abstract: A polishing pad (104, 304, 404, 504) having an annular polishing track (152, 312, 412, 512) for polishing a wafer (120, 316, 416, 516). A plurality of grooves (112, 320, 420, 520) are arranged within the wafer track so that they are spaced from one another both radially and circumferentially relative to the rotational nature of pad and are at least partially non-circumferential relative to the pad.

Abstract: A chemical mechanical polishing pad (200, 300, 400, 500, 600) that includes a translucent windowpane (220, 320, 404, 516, 524, 604) that allows optical measurements to be made using light energy reflected from the surface of a wafer (212, 324, 608) or other object being polished. The windowpane includes a trailing end (350, 416, 632) and a leading end (348, 412, 628) each having a streamlined shape so as to reduce the disturbance to the flow of a polishing medium (216) around the windowpane. The polishing pad may further include grooves (336, 428, 520, 640) that are diverted around the windowpane so as to provide a continuous path for the polishing medium in the region of the windowpane.

Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) containing a plurality of grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations largely parallel to one or more corresponding respective velocity vectors (V1-V4)(V1?-V4?)(V1?-V4?) (V1??-V4??) of the wafer. These parallel orientations promote the formation of mixing wakes in a polishing medium (120) within these grooves during polishing.

Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) containing a plurality of grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations largely parallel to one or more corresponding respective velocity vectors (V1-V4)(V1?-V4?)(V1?-V4?) (V1??-V4??) of the wafer. These parallel orientations promote the formation of mixing wakes in a polishing medium (120) within these grooves during polishing.

Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) having a polishing region (164, 320, 420, 504) defined by first and second boundaries ((168, 172), (312, 316), (412, 416) (508, 512)) having shapes and locations that are a function of the size of polished surface (116) of the article being polished and the type of polisher (100) used. The polishing region has several zones ((Z1-Z3) (Z1?-Z3?)(Z1?-Z3?)(Z1??-Z3??)) each containing corresponding grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations selected based on the direction of one or more velocity vectors (V1-V4)(V1?-V4?)(V1?-V4?)(V1??-V4??) of the wafer in that zone.

Abstract: A polishing pad (200) that includes a polishing layer (204) having a polishing region (208) for polishing a wafer (220). The polishing layer includes a set of inflow grooves (232) that extend into the polishing region and a set of outflow grooves (236) that extend out of the polishing region. The inflow and outflow grooves cooperate with one another to enhance the utilization of a polishing slurry during polishing of the wafer.

Abstract: A chemical mechanical polishing pad (200) that includes a polishing layer (204) having a polishing region (208) and containing a plurality of grooves (212) extending at least partially into the polishing region. During polishing, the grooves contain a slurry (236) that facilitates polishing. Each groove includes a plurality of mixing structures (220) configured to cause mixing of slurry located in a lower portion (240) of the groove with slurry located in the upper portion (244) of the groove.

Abstract: A textured surface characterization system (100) includes a characterization apparatus (110) that contacts a textured surface (104) of an item (108) in order to characterize that surface. The characterization system includes a fluid delivery system (204) for flowing a fluid (128) across the textured surface when the textured surface is in contact with the characterization apparatus. Pressure measurement structures (144, 160) on the characterization apparatus provide pressure data for the fluid as it flows across the textured surface. This pressure data is used to characterize the textured surface.