Patents by Inventor Grigoriy Kishko

Grigoriy Kishko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Surface treatment of substrates using passivation layers
    Patent number: 11094528
    Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: August 17, 2021
    Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD., MATTSON TECHNOLOGY, INC.
    Inventors: Tongchuan Gao, Grigoriy Kishko, Vijay M. Vaniapura, Michael X. Yang
  • Surface Treatment of Substrates Using Passivation Layers
    Publication number: 20190189420
    Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Inventors: Tongchuan Gao, Grigoriy Kishko, Vijay M. Vaniapura, Michael X. Yang
  • Surface treatment of substrates using passivation layers
    Patent number: 10217626
    Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: February 26, 2019
    Assignee: Mattson Technology, Inc.
    Inventors: Tongchuan Gao, Grigoriy Kishko, Vijay M. Vaniapura, Michael X. Yang