Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.

Abstract: A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: A method for synthesizing Pt(PF3)4 (CAS #19529-53-4) comprises dissolving a platinum compound having a general formula, Pt(Hal)2(PF3)x, in an anhydrous solvent forming a Pt(Hal)2(PF3)x solution, wherein Hal=F, Cl, Br or x=1, 2, adding a metal powder and excess amount of PF3 into the Pt(Hal)2(PF3)x solution, and forming Pt(PF3)4 through a reaction between Pt(Hal)2(PF3)x, PF3 and the metal powder under a reaction condition. The method further comprises synthesizing Pt(Hal)2(PF3)x through the steps of dispersing a platinum precursor having a general formula, Pt(Hal)2, into the anhydrous solvent forming a suspension of Pt(Hal)2, wherein Hal=F, Cl, Br or I, introducing PF3 into the suspension of Pt(Hal)2, and forming the solution of the platinum compound Pt(Hal)2(PF3)x in the anhydrous solvent through a reaction of PF3 and Pt(Hal)2.

Abstract: A method for synthesizing Pt(PF3)4 (CAS # 19529-53-4) comprises dissolving a platinum compound having a general formula, Pt(Hal)2(PF3)x, in an anhydrous solvent forming a Pt(Hal)2(PF3)x solution, wherein Hal=F, Cl, Br or I, x=1, 2, adding a metal powder and excess amount of PF3 into the Pt(Hal)2(PF3)x solution, and forming Pt(PF3)4 through a reaction between Pt(Hal)2(PF3)x, PF3 and the metal powder under a reaction condition. The method further comprises synthesizing Pt(Hal)2(PF3)xthrough the steps of dispersing a platinum precursor having a general formula, Pt(Hal)2, into the anhydrous solvent forming a suspension of Pt(Hal)2, wherein Hal=F, Cl, Br or I, introducing PF3 into the suspension of Pt(Hal)2, and forming the solution of the platinum compound Pt(Hal)2(PF3)xin the anhydrous solvent through a reaction of PF3 and Pt(Hal)2.

Abstract: Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by catalysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of n-tetrasilane.

Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.

Abstract: A metal cyclopentadienyl complex has the formula: wherein m?0; M is a Group I, II or III main group metal, alkali or transition metal; C5H4 represents a Cp ring where two hydrogens are substituted by M and R(F)m; R(F)m is connected to any one of the carbon atoms of the Cp and selected from a hydrocarbyl, fluorohydrocarbyl, silyl group [SiR?3], or amino group [—NR1R2]. The metal cyclopentadienyl complexes include Li(C5H4-2-C5H11) (CAS No: 2413046-23-6), K(C5H4-2-C5H11), Na(C5H4-2-C5H11), K(C5H4-1-F—C4H10), K(C5H4-1,1,1-3F—C4H6), Li(C5H4-2-C4H9), or In(C5H4-2-C5H11) (CAS No.: 2364634-67-1). A mono-substituted cyclopentadiene has the formula: wherein m?0; C5H5 represents the Cp ring where one hydrogen is substituted R(F)m; R(F)m is connected to any one of the carbon atoms of the Cp and selected from a hydrocarbyl, fluorohydrocarbyl, silyl group [SiR?3], or amino group [—NR1R2]. The mono-substituted cyclopentadienes include C5H5-1-F—C4H10, C5H5-2-C5H11, C5H5-2-C4H9, or C5H5-1,1,1-3F—C4H6.

Abstract: Disclosed are mono-substituted cyclopentadienes, metal cyclopentadienyl complexes and methods for synthesizing them. The disclosed mono-substituted cyclopentadienes are synthesized by a selective catalytic carbon-carbon coupling reaction. The disclosed metal cyclopentadienyl complexes are synthesized from the disclosed mono-substituted cyclopentadienes. The disclosed metal cyclopentadienyl complexes include main group metal and transition metal cyclopentadienyl complexes, and may be used as deposition precursors contained in film forming compositions for film depositions in semiconductor industry, such as ALD, CVD, SOD, etc.

Abstract: Disclosed are mono-substituted cyclopentadienes, metal cyclopentadienyl complexes and methods for synthesizing them. The disclosed mono-substituted cyclopentadienes are synthesized by a selective catalytic carbon-carbon coupling reaction. The disclosed metal cyclopentadienyl complexes are synthesized from the disclosed mono-substituted cyclopentadienes. The disclosed metal cyclopentadienyl complexes include main group metal and transition metal cyclopentadienyl complexes, and may be used as deposition precursors contained in film forming compositions for film depositions in semiconductor industry, such as ALD, CVD, SOD, etc.

Abstract: Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by pyrolysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature, residence time, and the relative amount of starting compounds. The disclosed synthesis methods allow facile preparation of n-tetrasilane.

Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.

Abstract: Disclosed are methods of synthesizing and using Titanium-containing film forming compositions comprising titanium halide-containing precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group.

Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.

Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2?)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Abstract: Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.