Abstract: An assembly may include a wafer and a plate may be mounted on the wafer. The wafer may have image sensor chips and scribe lines demarcating each image sensor chip. The image sensor chip may include an active surface. Chip pads and a micro-lens may be provided on the active surface. A photo-sensitive adhesive pattern may be provided between the plate and a region of the active surface between the chip pads and the micro-lens. An image sensor device implementing an image sensor chip having an individual plate may also be provided.

Abstract: An image sensor device including a protective plate may be manufactured from an image sensor chip having an active surface and a back surface opposite to the active surface. The image sensor chip may include chip pads formed in a peripheral region of the active surface, a microlens formed in a central region of the active surface and an intermediate region between the peripheral and central regions. A protective plate may be attached to the intermediate region of the active surface of the image sensor chip using an adhesive pattern that is sized and configured to maintain a separation distance between the protective plate and the microlens formed on the image sensor chip. Conductive plugs, formed before, during or after the manufacture of the image sensor chip circuitry may provide electrical connection between the chip pads and external connectors.

Abstract: A semiconductor package includes a semiconductor chip, a circuit board at which a wire pattern is formed, and a metal structure including a portion inserted through an opening of the circuit board and upon which the semiconductor chip rests. With the semiconductor chip in direct contact with the metal structure, thermal characteristics improve. With the circuit board supported by the metal structure, mechanical stability improves.

Abstract: A multi-chip package (MCP) is provided. The MCP comprises a plurality of stacked semiconductor chips, each including a chip pad and a first insulating layer overlying the chip pad with an opening to expose a portion of the chip pad. Each chip additionally includes a pad redistribution line formed on the first insulating layer and a second insulating layer covering the pad redistribution line. A via hole is formed through the chip, the first insulating layer, a pad redistribution line and the second insulating layer. The MCP further includes a protective layer formed on the bottom of the lowest semiconductor chip. The protective layer includes a conductive pad formed opposite the bottom of the lowest semiconductor chip. A conductive bar extends through the via holes of the stacked semiconductor chips, from the conductive pad, and is electrically connected to the pad redistribution line of the stacked semiconductor chips.

Abstract: A multi-chip package (MCP) is provided. The MCP comprises a plurality of stacked semiconductor chips, each including a chip pad and a first insulating layer overlying the chip pad with an opening to expose a portion of the chip pad. Each chip additionally includes a pad redistribution line formed on the first insulating layer and a second insulating layer covering the pad redistribution line. A via hole is formed through the chip, the first insulating layer, a pad redistribution line and the second insulating layer. The MCP further includes a protective layer formed on the bottom of the lowest semiconductor chip. The protective layer includes a conductive pad formed opposite the bottom of the lowest semiconductor chip. A conductive bar extends through the via holes of the stacked semiconductor chips, from the conductive pad, and is electrically connected to the pad redistribution line of the stacked semiconductor chips.

Abstract: A solder bump structure may have a metal stud formed on a chip pad of a semiconductor chip. Surfaces of the metal stud may be plated with a solder. The metal stud may be located on a substrate pad of the substrate. The substrate pad may have a pre-solder applied thereto. After a solder reflow, the solder bump may have a concave shape.

Abstract: A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other.

Abstract: A flip chip device may have a semiconductor chip with an active surface on which chip pads and a protective layer may be provided. Solder bumps may be provided on the active surface and electrically connected to the chip pads. And a solder bar may be provided on a portion of the protective layer. The solder bar may disperse thermal stress produced in the solder bumps. A metal core may be embedded within the solder bar. The flip chip device may be mounted on and flip-chip bonded to a substrate. The substrate may have land pads to which the solder bumps and the solder bar may be mechanically joined. The solder bar increases a joint area between the flip chip device and the substrate and reinforces solder connections therebetween.

Abstract: A solder bump structure may be formed using a dual exposure technique of a photoresist, which may be a positive photoresist. The positive photoresist may be coated on an IC chip. First openings may be formed at first exposed regions of the photoresist by a first exposure process. Metal projections may be formed in the first openings. A second opening may be formed at a second exposed region of the photoresist by a second exposure process. The second exposed region may include non-exposed regions defined by the first exposure process. A solder material may fill the second opening and may be reflowed to form a solder bump. The metal projections may be embedded within the solder bump.

Abstract: A chip stack package is manufactured at a wafer level by forming connection vias in the scribe lanes adjacent the chips and connecting the device chip pads to the connection vias using rerouting lines. A lower chip is then attached and connected to a substrate, which may be a test wafer, and an upper chip is attached and connected to the lower chip, the electrical connections being achieved through their respective connection vias. In addition to the connection vias, the chip stack package may include connection bumps formed between vertically adjacent chips and/or the lower chip and the substrate. The preferred substrate is a test wafer that allows the attached chips to be tested, and replaced if faulty, thereby ensuring that each layer of stacked chips includes only “known-good die” before the next layer of chips is attached thereby increasing the production rate and improving the yield.

Abstract: A thermal-stress-absorbing interface structure is provided between a semiconductor integrated circuit chip and a surface-mount structure. The interface structure comprises an elongated conductive-bump pad having a first length-wise end and a second length-wise end, and a side. The pad has an interconnection line extending from the side thereof intermediate the first and the second ends. The interconnection line is electrically connected to the chip. The interface structure further includes a first polymer layer having an exposed surface, and a second polymer layer, each having a different modulus of elasticity, disposed below the pad. The second polymer layer extends over substantially the entire exposed surface of the first polymer layer to absorb a thermal stress during thermal cycling.

Abstract: A semiconductor wafer with semiconductor chips having chip pads and a passivation layer is provided. First and second dielectric layers are sequentially formed on the passivation layer. The first and second dielectric layers form a ball pad area that includes an embossed portion, i.e., having a non-planar surface. A metal wiring layer is formed on the resulting structure including the embossed portion. A third dielectric layer is formed on the metal wiring layer. A portion of the third dielectric layer located on the embossed portion is removed to form a ball pad. A solder ball is formed on the embossed ball pad. With the embossed ball pad, the contact area between the solder balls and the metal wiring layer is increased, thereby improving the connection reliability.

Abstract: A wafer level chip package has a redistrubution substrate, at least one lower semiconductor chip stacked on the redisctribution substrate, and an uppermost semiconductor chip. The redistribution substrate has a redistribution layer and substrate pads connected to the redistribution layer. The lower semiconductor chip is stacked on the redistribution layer and may have through holes for partially exposing the redistribution layer, the through holes corresponding to the substrate pads, and having conductive filling material filling the through holes. The uppermost semiconductor chip may have the same elements as the lower semiconductor chip, and may be flip chip bonded to the through holes. The package may further have a filling layer for filling areas between chips, a metal lid for coating most of the external surfaces, and external connection terminals formed on and electrically connected to the exposed redistribution layer from the first dielectric layer of the redistribution substrate.

Abstract: A structure for improving electrical performance and interconnection reliability of an integrated circuit in a Wafer Level Packaging (WLP) application comprises an air pad located under an interconnection metal solder pad. Using a low dielectric material such as air underlying the interconnection pad, pad capacitance is reduced, thereby improving the speed of associated electrical signal transitions. By configuring the structure to have interconnection pad supports at only a limited number of pad periphery points, a cured soldered connection can absorb mechanical stresses associated with divergent movement between a connecting wire and the interconnection pad. Such a structure can be manufactured using the steps of: 1) depositing a soluble base material in a cavity on an IC substrate, 2) depositing a metal pad layer on the soluble base layer, and 3) dissolving the soluble base layer, leaving an air gap under the metal pad layer which is supported by the periphery supports.

Abstract: A thermal-stress-absorbing interface structure between a semiconductor integrated circuit chip and a surface-mount structure and a method for manufacturing the same. The thermal-stress-absorbing interface structure comprises an elongated conductive-bump pad having a first length-wise end and a second length-wise end, and a side. The thermal-stress-absorbing interface structure includes means for allowing the first end of the pad to move up when the second end of the pad moves down and alternately allowing the first end to move down when the second end moves up, upon thermal cycling. The means has a center axis and the up-and-down movements of the pad are balanced on the center axis. In accordance with this novel structure of the present invention, interconnection reliability such as solder joint reliability can be significantly improved.

Abstract: A multi-chip package (MCP) is provided. The MCP comprises a plurality of stacked semiconductor chips, each including a chip pad and a first insulating layer overlying the chip pad with an opening to expose a portion of the chip pad. Each chip additionally includes a pad redistribution line formed on the first insulating layer and a second insulating layer covering the pad redistribution line. A via hole is formed through the chip, the first insulating layer, a pad redistribution line and the second insulating layer. The MCP further includes a protective layer formed on the bottom of the lowest semiconductor chip. The protective layer includes a conductive pad formed opposite the bottom of the lowest semiconductor chip. A conductive bar extends through the via holes of the stacked semiconductor chips, from the conductive pad, and is electrically connected to the pad redistribution line of the stacked semiconductor chips.

Abstract: A thermal-stress-absorbing interface structure is provided between a semiconductor integrated circuit chip and a surface-mount structure. The interface structure comprises an elongated conductive-bump pad having a first length-wise end and a second length-wise end, and a side. The pad has an interconnection line extending from the side thereof intermediate the first and the second ends. The interconnection line is electrically connected to the chip. The interface structure further includes a first polymer layer having an exposed surface, and a second polymer layer, each having a different modulus of elasticity, disposed below the pad. The second polymer layer extends over substantially the entire exposed surface of the first polymer layer to absorb a thermal stress during thermal cycling.

Abstract: A center pad type integrated circuit chip and a method of forming the same is presented. The chip comprises an integrated circuit chip having chip pads formed on a center region thereof and a jumper. The jumper includes a buffer layer arranged adjacent to a side of the chip pads and a plurality of jump metal lines formed on the buffer layer. The jump metal lines are spaced apart from each other.

Abstract: A thermal-stress-absorbing interface structure between a semiconductor integrated circuit chip and a surface-mount structure, and a method for manufacturing the same. The thermal-stress-absorbing interface structure comprises an elongated conductive-bump pad having a first length-wise end and a second length-wise end, and a side. The thermal-stress-absorbing interface structure includes means for allowing the first end of the pad to move up when the second end of the pad moves down and alternately allowing the first end to move down when the second end moves up, upon thermal cycling. The means has a center axis and the up-and-down movements of the pad are balanced on the center axis. In accordance with this novel structure of the present invention, interconnection reliability such as solder joint reliability can be significantly improved.

Abstract: A wafer level chip package has a redistrubution substrate, at least one lower semiconductor chip stacked on the redisctribution substrate, and an uppermost semiconductor chip. The redistribution substrate has a redistribution layer and substrate pads connected to the redistribution layer. The lower semiconductor chip is stacked on the redistribution layer and may have through holes for partially exposing the redistribution layer, the through holes corresponding to the substrate pads, and having conductive filling material filling the through holes. The uppermost semiconductor chip may have the same elements as the lower semiconductor chip, and may be flip chip bonded to the through holes. The package may further have a filling layer for filling areas between chips, a metal lid for coating most of the external surfaces, and external connection terminals formed on and electrically connected to the exposed redistribution layer from the first dielectric layer of the redistribution substrate.