Abstract: A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first drift region, and a metal field plate disposed over the first dielectric layer. The first drift region and the first doped region include a first conductivity type. The second drift region, the second doped region and third doped region include a second conductivity type complementary to the first conductivity type. The first dielectric layer overlaps a portion of the first drift region and a portion of the second drift region. The second doped region is separated from the first doped region.

Abstract: An antenna for improving an influence of surface waves and increasing a beamwidth includes: a substrate, a first metal ground, a second metal ground, an emitting end and a receiving module. The first metal ground and the second metal ground are disposed on a first surface of the substrate. The second metal ground is completely separated from the first metal ground by a first gap. The emitting end is disposed on the first metal ground and includes a transmission line and a plurality of radiating elements. The receiving module is disposed on the second metal ground and includes a first receiving end and a second receiving end. The first receiving end includes a transmission line and a plurality of radiating elements. The second receiving end includes a transmission line and a plurality of radiating elements.

Abstract: Provided is an antenna for improving an influence of surface waves and increasing a beamwidth, including: a substrate, a first metal ground, a second metal ground, an emitting end and a receiving module. The first metal ground and the second metal ground are disposed on a first surface of the substrate. The second metal ground is completely separated from the first metal ground by a first gap. The emitting end is disposed on the first metal ground and includes a transmission line and a plurality of radiating elements. The receiving module is disposed on the second metal ground and includes a first receiving end and a second receiving end. The first receiving end includes a transmission line and a plurality of radiating elements. The second receiving end includes a transmission line and a plurality of radiating elements.

Abstract: The disclosure provides a detecting method for a resistive random access memory (RRAM) cell. The method includes: retrieving an RRAM cell and measuring a cell current of the RRAM cell; when a current value of the cell current is higher than a first threshold, performing at least one of a plurality of reset operations and a set operation to the RRAM cell and determining whether a resistance state of the RRAM cell has been switched after experiencing the at least one of the reset operations and the set operation. If no, a recovery operation is performed to the RRAM cell to recover the RRAM cell; if yes, the RRAM is determined to be in a healthy state.