Patents by Inventor Guangda NIU

Guangda NIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-element perovskite material as well as preparation and luminescent application thereof
    Patent number: 11046589
    Abstract: The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is Cs2NaxAg1-xInyBi1-yCl6, wherein 0?x?1, 0?y?1. Meanwhile, based on the very strong self-trapped exciton states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: June 29, 2021
    Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jiang Tang, Shunran Li, Guangda Niu, Jiajun Luo, Qingsong Hu, Jing Liu
  • MULTI-ELEMENT PEROVSKITE MATERIAL AS WELL AS PREPARATION AND LUMINESCENT APPLICATION THEREOF
    Publication number: 20190330074
    Abstract: The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is Cs2NaxAg1-xInyBi1-yCl6, wherein 0?x?1, 0?y?1. Meanwhile, based on the very strong self-trapped excitors states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.
    Type: Application
    Filed: October 25, 2018
    Publication date: October 31, 2019
    Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jiang Tang, Shunran Li, Guangda Niu, Jiajun Luo, Qingsong Hu, Jing Liu
  • SEMICONDUCTOR RADIATION DETECTOR BASED ON BI-BASED QUATERNARY HALIDE SINGLE CRYSTAL AND MANUFACTURING METHOD THEREOF
    Publication number: 20190019905
    Abstract: The present invention discloses a semiconductor radiation detector based on Bi-based quaternary halide single crystal and a manufacturing method, and relates to the technical field of ray imaging detector manufactured by a semiconductor material. The semiconductor radiation detector in this example includes: a light absorption layer made of Bi-based quaternary halide single crystal; an electron selective contact layer and a hole selective contact layer respectively provided on upper and lower sides of the light absorption layer; and two electrodes which are respectively in contact with the two charge selective contact layers and used as positive and negative electrodes of the device. The semiconductor radiation detector in the present invention has advantages such as high sensitivity, good stability and environmental friendliness.
    Type: Application
    Filed: November 24, 2017
    Publication date: January 17, 2019
    Inventors: Jiang TANG, Weicheng PAN, Haodi WU, Jiajun LUO, Guangda NIU, Ying ZHOU