Abstract: A memory array device is disclosed, which includes a plurality of memory array rows, each memory array row including a plurality of subsidiary memory arrays and a switch arranged between every adjacent two subsidiary memory arrays; wherein each subsidiary memory array includes: a memory unit for storing a data; a programming indication bit arranged prior to the memory unit for indicating whether the subsidiary memory array has been programmed; and an inversion indication bit arranged subsequent to the memory unit for indicating whether a data had been inverted before being written in the memory unit of the subsidiary memory array. A method for reducing a read current of a memory array device is also disclosed.

Abstract: Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.

Abstract: A row decoding circuit and a memory are provided. The row decoding circuit is adapted for providing a word line operation voltage and a control-gate line operation voltage to a dual-bit split gate flash memory array, and includes a dummy row decoding unit, at least one row decoding unit and a driving voltage generating circuit. The dummy row decoding unit includes a first dummy control-gate line voltage output, a second dummy control-gate line voltage output and at least one dummy word line voltage output. The row decoding unit includes a first control-gate line voltage output, a second control-gate line voltage output and at least one word line voltage output. The driving voltage generating circuit is adapted for providing a third driving voltage to the first control-gate line voltage output and the second control-gate line voltage output.

Abstract: Memory and reading method thereof, and circuit for reading memory are provided. The memory includes a memory array; a row decoding circuit configured to apply word line voltage to selected word line in reading operation; a column decoding circuit configured to select a source line connected with a target memory cell based on reading data, the target memory cell using the selected word line; and a reading circuit including first and second input terminals and a comparison node, the first input terminal being connected with the source line of the memory cell through the column decoding circuit and configured to let in reading current of the target memory cell, the second input terminal being configured to let in base current, the comparison node being configured to compare reading current with reference current related to the base current to output reading result. The memory is driven under low voltage.

Abstract: Charge pump system and memory are provided. The system includes: a first enabling control unit, adapted to delay at least one start-up signal of the system to obtain and output an oscillating enabling signal after receiving the at least one start-up signal and a voltage boosting enabling signal; a second enabling control unit, adapted to delay the oscillating enabling signal to obtain and output a charge pump enabling signal after receiving the oscillating enabling signal and the voltage boosting enabling signal; a clock oscillating unit, adapted to generate a clock signal after receiving the oscillating enabling signal; and at least one charge pump cell, adapted to output a boosting voltage after receiving the charge pump enabling signal and the clock signal, obtain the voltage boosting enabling signal based on the boosting voltage, and output the voltage boosting enabling signal. Power consumption of the system in a start-up process is reduced.

Abstract: A method of processing a polysilicon-comprising composition comprises forming a first wall comprising at least one recess in polysilicon. A second wall comprising polysilicon is formed. Material other than polysilicon is deposited within the at least one recess and over the polysilicon of the second wall. The material is etched selectively relative to polysilicon to expose polysilicon of the second wall and to leave the material within the at least one recess in the first wall. The exposed polysilicon of the second wall is etched selectively relative to the material within the at least one recess in the first wall. Other methods are disclosed.

Abstract: Charge pump circuit and memory are provided. The charge pump circuit includes a clock driving unit, a voltage boosting unit, a boosting swing control unit, a first and second NMOS tubes, a first and second current mirror units. The clock driving unit is adapted to form and output clock driving signals to the voltage boosting unit. The voltage boosting unit is adapted to boost voltage and output it to the boosting swing control unit and the first current minor unit. The boosting swing control unit is adapted to output boosting swing control signals to the first NMOS tube. The first current minor unit is to output first mirror current and the second current minor unit is to minor the first mirror current and output second minor current. Frequency of the clock driving signal varies with leakage current load, and size of the charge pump circuit and power consumption are reduced.

Abstract: A charge pump circuit includes a charge pump, a regulator circuit, and a load current, wherein the charge pump circuit further includes: a filter circuit connected to an output terminal of the charge pump for filtering an output voltage of the charge pump; and a ripple control circuit connected both to the output terminal of the charge pump and to the filter circuit for reducing the output voltage of the charge pump upon an increase thereof, thereby attenuating ripples contained in the output voltage of the charge pump. The charge pump circuit is capable of enabling a relatively stable output voltage for the charge pump, thus benefiting a downstream integrated circuit.

Abstract: A flash memory device is provided. The flash memory device includes a memory cell array and a pre-charge unit. The pre-charge unit, coupled to a plurality of bit lines corresponding with the memory cell array, pre-charges the bit lines to a predetermined voltage during a pre-charge stage. The pre-charge unit includes a voltage stabilizing unit to provide a constant current to the bit lines. Due to the voltage stabilizing unit, in a programming process, the voltage applied to the bit lines which are not related with programming may not drop as a result of current leakage. Therefore, the memory cells except the memory cell to be programmed are kept in cut off state, without a current passing. As a result, interference with the memory cells which are not to be programmed may be effectively avoided and the accuracy of programming may be improved.

Abstract: Charge pump circuit and memory are provided. The charge pump circuit includes a clock driving unit, a voltage boosting unit, a boosting swing control unit, a first and second NMOS tubes, a first and second current mirror units. The clock driving unit is adapted to form and output clock driving signals to the voltage boosting unit. The voltage boosting unit is adapted to boost voltage and output it to the boosting swing control unit and the first current minor unit. The boosting swing control unit is adapted to output boosting swing control signals to the first NMOS tube. The first current minor unit is to output first mirror current and the second current minor unit is to minor the first mirror current and output second minor current. Frequency of the clock driving signal varies with leakage current load, and size of the charge pump circuit and power consumption are reduced.

Abstract: A row decoding circuit and a memory are provided. The row decoding circuit is adapted for providing a word line operation voltage and a control-gate line operation voltage to a dual-bit split gate flash memory array, and includes a dummy row decoding unit, at least one row decoding unit and a driving voltage generating circuit. The dummy row decoding unit includes a first dummy control-gate line voltage output, a second dummy control-gate line voltage output and at least one dummy word line voltage output. The row decoding unit includes a first control-gate line voltage output, a second control-gate line voltage output and at least one word line voltage output. The driving voltage generating circuit is adapted for providing a third driving voltage to the first control-gate line voltage output and the second control-gate line voltage output.

Abstract: A flash memory is disclosed. The flash memory includes a flash memory chip; a serial-to-parallel converter for receiving and converting a serial data to a parallel data; and a data mode decision circuit connected to an output terminal of the serial-to-parallel converter for generating an inversion control signal through the parallel data and for applying an inversion processing to the parallel data and then outputting an inverted parallel data to the flash memory chip under the control of the inversion control signal. By converting the serial data to a parallel data and then writing the parallel data into the flash memory chip, a lower proportion of the inversion control signal to the total amount of data is achieved, and therefore less area is consumed while the same programming efficiency and average programming power is maintained compared with a flash memory adopting the bit inversion technique of the prior art.

Abstract: A charge pump circuit includes a charge pump, a regulator circuit, and a load current, wherein the charge pump circuit further includes: a filter circuit connected to an output terminal of the charge pump for filtering an output voltage of the charge pump; and a ripple control circuit connected both to the output terminal of the charge pump and to the filter circuit for reducing the output voltage of the charge pump upon an increase thereof, thereby attenuating ripples contained in the output voltage of the charge pump. The charge pump circuit is capable of enabling a relatively stable output voltage for the charge pump, thus benefiting a downstream integrated circuit.

Abstract: Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.

Abstract: A memory array device is disclosed, which includes a plurality of memory array rows, each memory array row including a plurality of subsidiary memory arrays and a switch arranged between every adjacent two subsidiary memory arrays; wherein each subsidiary memory array includes: a memory unit for storing a data; a programming indication bit arranged prior to the memory unit for indicating whether the subsidiary memory array has been programmed; and an inversion indication bit arranged subsequent to the memory unit for indicating whether a data had been inverted before being written in the memory unit of the subsidiary memory array. A method for reducing a read current of a memory array device is also disclosed.

Abstract: A semiconductor device comprises a substrate, a word line, an insulation material, and an etch stop material. The substrate comprises a pillar that may comprise an active area. The word line is formed in the substrate. The insulation material is formed on the word line. The etch stop material is formed on the insulating material and around the pillar.

Abstract: A flash memory is disclosed. The flash memory includes a flash memory chip; a serial-to-parallel converter for receiving and converting a serial data to a parallel data; and a data mode decision circuit connected to an output terminal of the serial-to-parallel converter for generating an inversion control signal through the parallel data and for applying an inversion processing to the parallel data and then outputting an inverted parallel data to the flash memory chip under the control of the inversion control signal. By converting the serial data to a parallel data and then writing the parallel data into the flash memory chip, a lower proportion of the inversion control signal to the total amount of data is achieved, and therefore less area is consumed while the same programming efficiency and average programming power is maintained compared with a flash memory adopting the bit inversion technique of the prior art.

Abstract: A flash memory device is provided. The flash memory device includes a memory cell array and a pre-charge unit. The pre-charge unit, coupled to a plurality of bit lines corresponding with the memory cell array, pre-charges the bit lines to a predetermined voltage during a pre-charge stage. The pre-charge unit includes a voltage stabilizing unit to provide a constant current to the bit lines. Due to the voltage stabilizing unit, in a programming process, the voltage applied to the bit lines which are not related with programming may not drop as a result of current leakage. Therefore, the memory cells except the memory cell to be programmed are kept in cut off state, without a current passing. As a result, interference with the memory cells which are not to be programmed may be effectively avoided and the accuracy of programming may be improved.