Abstract: A vertical gallium oxide transistor and a preparation method thereof are provided. The method includes: annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400° C. for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; removing the defective layer and the oxidized layer on a back of the gallium oxide material and the defective layer on a front of the gallium oxide material so as to obtain an initial sample; and preparing a heavily doped contact layer on the oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of the sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.

Abstract: A preparation method of a gallium oxide device based on high-temperature annealing technology and a gallium oxide device are provided. The preparation method includes: preparing a first barrier layer on a surface of a gallium oxide wafer to block an oxygen atmosphere; implementing a patterning process for regulating impurities of the gallium oxide wafer on the barrier layer, a process depth of the patterning process not exceeding a thickness of the barrier layer; annealing the gallium oxide wafer subjected to above treatment in the oxygen atmosphere; removing the barrier layer; and removing a surface layer of the gallium oxide wafer with the barrier layer lifted off. Problems that a local region of a gallium oxide material cannot be treated alone and net carrier concentration in a selective region of the gallium oxide material cannot be regulated with high-temperature annealing technology in the oxygen atmosphere in related art are solved.

Abstract: A speech recognition method including performing speech recognition on an inputted speech to obtain a first text, correcting the first text according to an obtained mapping relationship between words in different languages to obtain at least one second text, and in response to determining that the at least one second text corresponds to the same language, outputting the first text, or in response to determining that the at least one second text corresponds to different languages, determine an outputted text according to first probability values corresponding to each of the at least one second text. By combining the mapping relationships between words in different languages in correcting the initial ASR result, the present application ensures the accuracy of the final speech recognition result.

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.

Abstract: A speech recognition method including performing speech recognition on an inputted speech to obtain a first text, correcting the first text according to an obtained mapping relationship between words in different languages to obtain at least one second text, and in response to determining that the at least one second text corresponds to the same language, outputting the first text, or in response to determining that the at least one second text corresponds to different languages, determine an outputted text according to first probability values corresponding to each of the at least one second text. By combining the mapping relationships between words in different languages in correcting the initial ASR result, the present application ensures the accuracy of the final speech recognition result.

Abstract: An electronic device includes a first electrode, and a second electrode spaced apart from the first electrode. The electronic device further includes a conduction channel in electrical connection with the first and second electrodes so as to be able to conduct a charge carrier current between the first and second electrodes along a condition path during an operating condition. The conduction channel has a gradient semiconductor oxide composition transverse to the conduction path such that the gradient semiconductor oxide composition varies from indium rich to gallium rich.

Abstract: A high voltage equipment box for a rail vehicle includes a box body and electric equipment arranged in the box body, two ends of the box body in a width direction of the vehicle extend to respective skirt plates, and an avoidance gap is provided at a bottom of each of the two ends of the box body, a bottom of each of the skirt plates is fixed at the respective avoidance gap, a top of the box body extends to a position above a bottom beam of a vehicle body, and a bottom of the box body is flush with a bottom plate of the vehicle body and forms a part of the bottom plate of the vehicle body.

Abstract: A high voltage equipment box for a rail vehicle includes a box body and electric equipment arranged in the box body, two ends of the box body in a width direction of the vehicle extend to respective skirt plates, and an avoidance gap is provided at a bottom of each of the two ends of the box body, a bottom of each of the skirt plates is fixed at the respective avoidance gap, a top of the box body extends to a position above a bottom beam of a vehicle body, and a bottom of the box body is flush with a bottom plate of the vehicle body and forms a part of the bottom plate of the vehicle body.