Abstract: The disclosure relates to KRASG12D inhibitor compounds having the structure of Formula (A) or Formula (B), pharmaceutical compositions thereof, and methods of use thereof for inhibiting, treating, and/or preventing KRASG12D mutation-associated diseases, disorders and conditions.

Abstract: A parameterization method for point cloud data, and a device includes performing semantic segmentation on a plurality of three-dimensional data points of point cloud data in a spatial coordinate system to obtain at least one semantic object, the at least one semantic object corresponds to a plurality of three-dimensional semantic data points. The parameterization method for point cloud data further includes performing parametric fitting on the plurality of three-dimensional semantic data points to obtain spatial geometric parameters of the at least one semantic object corresponding to the plurality of three-dimensional semantic data points in the spatial coordinate system. In addition, a map construction method is further provided. By adopting the above technical solution, the automation of constructing a semantic map based on the point cloud data can be achieved.

Abstract: A vertical gallium oxide transistor and a preparation method thereof are provided. The method includes: annealing a gallium oxide material in an oxygen atmosphere at a range of temperature of 1000 to 1400° C. for 1 to 24 h so as to form a single crystal layer, a defective layer and an oxidized layer; removing the defective layer and the oxidized layer on a back of the gallium oxide material and the defective layer on a front of the gallium oxide material so as to obtain an initial sample; and preparing a heavily doped contact layer on the oxidized layer, preparing a source electrode layer on the contact layer, and preparing a trench perpendicular to a plane of the sample, and preparing a gate dielectric layer in the trench to fabricate a gate electrode and a drain electrode.

Abstract: A preparation method of a gallium oxide device based on high-temperature annealing technology and a gallium oxide device are provided. The preparation method includes: preparing a first barrier layer on a surface of a gallium oxide wafer to block an oxygen atmosphere; implementing a patterning process for regulating impurities of the gallium oxide wafer on the barrier layer, a process depth of the patterning process not exceeding a thickness of the barrier layer; annealing the gallium oxide wafer subjected to above treatment in the oxygen atmosphere; removing the barrier layer; and removing a surface layer of the gallium oxide wafer with the barrier layer lifted off. Problems that a local region of a gallium oxide material cannot be treated alone and net carrier concentration in a selective region of the gallium oxide material cannot be regulated with high-temperature annealing technology in the oxygen atmosphere in related art are solved.

Abstract: A graphitization furnace with a rapid active cooling system is disclosed, including a furnace body and an active cooling system. The active cooling system is provided with at least one medium loop unit and a control unit for controlling a flow velocity of a medium in the medium loop unit, each medium loop unit includes a plurality of heat removal pipes pre-embedded in a furnace cavity of the furnace body, and each heat removal pipe is provided with a medium flow channel communicated with the medium loop unit. The graphitization furnace with a rapid active cooling system can realize rapid active cooling, short turnover time and high energy utilization efficiency of the graphitization furnace, and has wide applicability, which is not only suitable for construction of a new graphitization furnace, but also suitable for transformation of the existing Acheson graphitization furnace.