Patents by Inventor Guangyu Gavin Huang

Guangyu Gavin Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated structures containing vertically-stacked memory cells
    Patent number: 9761599
    Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: September 12, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Gavin Huang
  • Integrated Structures Containing Vertically-Stacked Memory Cells
    Publication number: 20170053986
    Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
    Type: Application
    Filed: August 17, 2015
    Publication date: February 23, 2017
    Inventors: Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Gavin Huang