Abstract: In order to avoid unwanted degradation in no-load operation of solar cell modules composed, in particular, of amorphous silicon, an internal load resistor is integrated in the module and is connected across the output terminals during no-load operation of the module. Disconnection of the resistor during load operation occurs either in a mechanical manner by way of a mechanical switch integrated in a plug extending to the load or occurs automatically by way of an electronic switch. The arrangement is employed in operation of solar cell modules for systems having a non-continuous power consumption such as, for example, appliances in mobile homes, mountain chalets and the like.

Abstract: A storage body composed of a silicon material, such as amorphous or finely crystalline silicon, is charged, with hydrogen, for example by contact with a hydrogen-containing atmosphere under positive pressure while at a temperature below about 100.degree. C. Such a body absorbs a relatively large amount of hydrogen and the so-absorbed hydrogen can be discharged by heating the body to temperatures above about 50.degree. C. The storage body may comprise a relatively thin silicon layer on a substrate, such as a steel, quartz glass or the like plate and may be overcoated with a catalytically-active metal layer, such as a palladium layer.

Abstract: A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrode is light transmissive. The crystal structure of the insulating layer is substantially the same as the crystal structure of the semiconductor body and has a spacing of energy bands which is greater than the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body. The interval of the energy bands of the insulating layer is at least 2 kT greater than the interval of the energy bands of the semiconductor body. It is preferable that the crystal structure of the insulating layer have a deviation of its lattice interval of less than 1% from that of the semiconductor body.

Abstract: A semiconductor sensor for fluids comprised of a body composed of an inorganic semiconductor material which is provided with a drain and source zone interconnected by a channel zone and including a layer of a reactive organic material capable of forming a reversible bond with at least a portion of the fluid being detected in the vicinity of the channel zone between the source and drain zones. The reactive organic material, such as carotenoids, polypropylenes, phthalocyanines, etc. reversably interacts with molecules of a given fluid substance and produce a reversible change in the surface potential of the layer composed of the organic material via a field effect and thus produce a reversible change of resistance in the channel zone and indicates the presence of such fluid by a change in the drain current of the sensor.

Abstract: A process for producing semiconductor luminescence diodes wherein an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material, a portion of the monocrystal at least up to the level of the epitaxial layer is removed to leave a border of monocrystal material and exposed epitaxial layer, and a dopant is diffused into this exposed epitaxial layer and the remaining border of the monocrystal material to produce a pn-junction in the epitaxial layer, and finally suitable electrodes are applied to the thus redoped zone of the epitaxial layer.

Abstract: Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into the melt as dopants, a first layer is grown on the substrate from the melt, and then a zinc containing layer is deposited over the first layer, and the temperatures of the layers are controlled to cause diffusion of the zinc into the first layer to a predetermined depth.