Abstract: Laser processing is enhanced by using endpointing or by using a charged particle beam together with a laser. End-pointing uses emissions, such as photons, electrons, ions, or neutral particles, from the substrate to determine when the material under the laser has changed or is about to change. Material removed from the sample can be deflected to avoid deposition onto the laser optics.

Abstract: A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising: a wafer table (110) for receiving and holding a semiconductor wafer; a radiation device (120) for generating a radiation beam (121); a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess; a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction; a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.

Abstract: A wafer cutting apparatus comprises a wafer positioning device for holding a wafer that is substantially covered with an opaque material such as molding compound and that has an exposed peripheral area, and for displacing the wafer relative to a wafer inspection system comprising a camera having a field of view. To perform visual data acquisition of said dicing street portions, the wafer is displaced such that a center of the camera's field of view follows a path along the exposed peripheral area of the wafer. A processing unit analyzes the visual data acquired for detecting or calculating locations and directions of the dicing streets. A wafer cutting tool cuts the wafer along straight lines between the dicing street portions which have been detected or calculated by the processing unit.

Abstract: During a wafer cutting process, the wafer substrate is inspected by illuminating it on both sides, and imaging light which has both been reflected from and transmitted through the substrate. The substrate is supported on a stage, and first and second illumination sources are arranged to respectively illuminate the first surface of the substrate supported by the stage and to illuminate the second surface of the substrate supported by the stage in use. At least one camera is adapted to image light received from the substrate when it is illuminated by the first illumination source and/or the second illumination source.

Abstract: A wafer cutting apparatus comprises a wafer positioning device for holding a wafer that is substantially covered with an opaque material such as molding compound and that has an exposed peripheral area, and for displacing the wafer relative to a wafer inspection system comprising a camera having a field of view. To perform visual data acquisition of said dicing street portions, the wafer is displaced such that a centre of the camera's field of view follows a path along the exposed peripheral area of the wafer. A processing unit analyses the visual data acquired for detecting or calculating locations and directions of the dicing streets. A wafer cutting tool cuts the wafer along straight lines between the dicing street portions which have been detected or calculated by the processing unit.

Abstract: A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising: a wafer table (110) for receiving and holding a semiconductor wafer; a radiation device (120) for generating a radiation beam (121); a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess; a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction; a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.

Abstract: A method of singulating a semiconductor wafer with laser energy while the semiconductor wafer is supported on a mounting tape during singulation comprises the step of depositing a coating material onto a portion of the mounting tape adjacent to a perimeter of the semiconductor wafer to form a protective layer over the mounting tape. The semiconductor wafer is then cut with a laser beam such that the laser beam at least partially impinges upon the protective layer during cutting of the semiconductor wafer. After singulation of the semiconductor wafer, the protective layer is removed from the mounting tape.

Abstract: A method of singulating a semiconductor wafer with laser energy while the semiconductor wafer is supported on a mounting tape during singulation comprises the step of depositing a coating material onto a portion of the mounting tape adjacent to a perimeter of the semiconductor wafer to form a protective layer over the mounting tape. The semiconductor wafer is then cut with a laser beam such that the laser beam at least partially impinges upon the protective layer during cutting of the semiconductor wafer. After singulation of the semiconductor wafer, the protective layer is removed from the mounting tape.

Abstract: Laser processing is enhanced by using endpointing or by using a charged particle beam together with a laser. End-pointing uses emissions, such as photons, electrons, ions, or neutral particles, from the substrate to determine when the material under the laser has changed or is about to change. Material removed from the sample can be deflected to avoid deposition onto the laser optics.

Abstract: A periodically poled second harmonic generating crystal having a long axis, said crystal comprising Magnesium Oxide doped Congruent Lithium Niobate, Magnesium Oxide doped Stoichiometric Lithium Niobate, Stoichiometric Lithium Tantalate or Potassium Titanyl Phosphate wherein the poling planes of said periodically poled crystal are canted relative to said axis and a doubled, external cavity laser utilizing said crystal, comprising an external cavity pump laser section and an extra-cavity frequency doubling section.

Abstract: A cavity-enhanced spectrometer light source comprises: i) an electrically pumped SCDL having first and second facets at least said first facet being anti-reflection coated, ii) a diffraction grating facing said first facet, iii) a collimating lens interposed between said facet and said diffraction grating, iv) means for translating said lens substantially perpendicular to the path of the light beam transmitted from said SCDL to said diffraction grating to provide coarse tuning of the emission wavelength of said SCDL, and v) means for altering at least one of the temperature of and current to said SCDL to provide fine tuning of the emission wavelength of said SCDL.

Abstract: A doubled, external cavity laser comprises an external cavity pump laser section and an extra-cavity frequency doubling section. The pump laser section comprises an edge-emitting, semiconductor chip having: i) an anti-reflection coating on the chip facet facing the cavity ii) a low reflectivity coating on the output facet of the cavity, iii) a wavelength selective element on the anti-reflection side of the chip for producing a single-mode output beam, iv) at least one lens on the output side of the chip which operates to collimate the chip output beam and direct it to the frequency doubling section.

Abstract: A method and apparatus for adjusting the path of an optical beam and in particular, a method and apparatus for improving the coupling efficiency (power input) of free-space radiation into an optical waveguide using, as part of an optical train, a weak lens positioned along the path of the optical beam (the Z axis) and adapted to adjust the path of the beam. The weak lens is translatable along the Z axis and also along at least one axis perpendicular to the Z axis (the X or Y axes). In a preferred embodiment, the weak lens possesses all three positional degrees of freedom (i.e., it is adjustable along all of the X, Y, and Z axes). In certain preferred embodiments, the weak lens is also capable of one or even two orientational degrees of freedom (i.e., pitch and/or yaw).

Abstract: A method and apparatus for adjusting the path of an optical beam and in particular, a method and apparatus for improving the coupling efficiency (power input) of free-space radiation into an optical waveguide using, as part of an optical train, a weak lens positioned along the path of the optical beam (the Z axis) and adapted to adjust the path of the beam. The weak lens is translatable along the Z axis and also along at least one axis perpendicular to the Z axis (the X or Y axes). In a preferred embodiment, the weak lens possesses all three positional degrees of freedom (i.e., it is adjustable along all of the X, Y, and Z axes). In certain preferred embodiments, the weak lens is also capable of one or even two orientational degrees of freedom (i.e., pitch and/or yaw).

Abstract: An optical fiber transmitter for emitting an information-carrying laser beam comprises an optically or electrically pumped single mode MQW (multi-quantum well) semiconductor amplifying mirror as a gain medium and a separate external reflector to form a cavity. The external cavity length defines a comb of optical modes, all or a subset of which correspond to channel wavelengths of an optical telecommunications system having plural optical channels. The semiconductor gain element has a homogeneously broadened gain region; a tuning arrangement tunes the laser from mode to mode across the gain region, thereby selecting each one of the plural optical channels. When the maximum gain bandwidth is less than mode-to-mode spacing defined by the cavity, the tuning arrangement includes a means of altering the temperature of the amplifying mirror, thereby translating the frequency of the gain peak from one mode to another.

Abstract: An optical fiber transmitter for emitting an information-carrying laser beam comprises an optically or electrically pumped single mode MQW (multi-quantum well) semiconductor amplifying mirror as a gain medium and a separate external reflector to form a cavity. The external cavity length defines a comb of optical modes, all or a subset of which correspond to channel wavelengths of an optical telecommunications system having plural optical channels. The semiconductor gain element has a homogeneously broadened gain region; a tuning arrangement tunes the laser from mode to mode across the gain region, thereby selecting each one of the plural optical channels. When the maximum gain bandwidth is less than mode-to-mode spacing defined by the cavity, the tuning arrangement includes a means of altering the temperature of the amplifying mirror, thereby translating the frequency of the gain peak from one mode to another.

Abstract: An optical fiber transmitter for emitting an information-carrying laser beam comprises an optically or electrically pumped single mode MQW (multi quantum well) semiconductor amplifying mirror as a gain medium and a separate external reflector to form a cavity. The external cavity length defines a comb of optical modes, all or a subset of which corresponding to channel wavelengths of an optical telecommunications system having plural optical channels. The semiconductor gain element has a homogeneously broadened gain region; a tuning arrangement tunes the laser from mode to mode across the gain region thereby selecting each one of the plural optical channels. When the maximum gain bandwidth is less than mode-to-mode spacing defined by the cavity, that tuning arrangement comprises a means of altering the temperature of the amplifying mirror, thereby translating the frequency of the gain peak from one mode to another.