Abstract: Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

Abstract: A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.

Abstract: Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

Abstract: A method includes receiving a layout of an integrated circuit that includes a plurality of layers, one of the layers is selected and one or more tile number values are provided. A die area of the integrated circuit is partitioned into a plurality of tiles on the basis of the tile number values. It is determined, on the basis of the layout, if a portion of the selected one of the layers in the tile has an available space for inclusion of a test cell or a dummy cell, and a label indicative of a result is assigned to the tile. It is determined, on the basis of the labels assigned, if one or more space availability criteria are fulfilled and, if fulfilled, the labels are used for placing at least one of one or more test cells and one or more dummy cells in the layout.

Abstract: A method includes receiving a layout of an integrated circuit that includes a plurality of layers, one of the layers is selected and one or more tile number values are provided. A die area of the integrated circuit is partitioned into a plurality of tiles on the basis of the tile number values. It is determined, on the basis of the layout, if a portion of the selected one of the layers in the tile has an available space for inclusion of a test cell or a dummy cell, and a label indicative of a result is assigned to the tile. It is determined, on the basis of the labels assigned, if one or more space availability criteria are fulfilled and, if fulfilled, the labels are used for placing at least one of one or more test cells and one or more dummy cells in the layout.

Abstract: A method includes receiving a layout of an integrated circuit that includes a plurality of layers, one of the layers is selected and one or more tile number values are provided. A die area of the integrated circuit is partitioned into a plurality of tiles on the basis of the tile number values. It is determined, on the basis of the layout, if a portion of the selected one of the layers in the tile has an available space for inclusion of a test cell or a dummy cell, and a label indicative of a result is assigned to the tile. It is determined, on the basis of the labels assigned, if one or more space availability criteria are fulfilled and, if fulfilled, the labels are used for placing at least one of one or more test cells and one or more dummy cells in the layout.

Abstract: A method includes providing a pre-optical proximity correction (OPC) layout of at least a portion of at least one reticle. The pre-OPC layout defines a test cell including a first test cell area having a plurality of first target features having a first pitch and a second test cell area having a plurality of second target features having a second pitch. A post-OPC layout of the portion of the reticle is formed on the basis of the pre-OPC layout. The formation of the post-OPC layout includes performing a rule-based OPC process, wherein a plurality of first reticle features for the first test cell area are provided on the basis of the plurality of first target features, and performing a model-based OPC process, wherein a plurality of second reticle features for the second test cell area are provided on the basis of the plurality of second target features.

Abstract: A method includes receiving a layout of an integrated circuit that includes a plurality of layers, one of the layers is selected and one or more tile number values are provided. A die area of the integrated circuit is partitioned into a plurality of tiles on the basis of the tile number values. It is determined, on the basis of the layout, if a portion of the selected one of the layers in the tile has an available space for inclusion of a test cell or a dummy cell, and a label indicative of a result is assigned to the tile. It is determined, on the basis of the labels assigned, if one or more space availability criteria are fulfilled and, if fulfilled, the labels are used for placing at least one of one or more test cells and one or more dummy cells in the layout.

Abstract: A method includes providing a pre-optical proximity correction (OPC) layout of at least a portion of at least one reticle. The pre-OPC layout defines a test cell including a first test cell area having a plurality of first target features having a first pitch and a second test cell area having a plurality of second target features having a second pitch. A post-OPC layout of the portion of the reticle is formed on the basis of the pre-OPC layout. The formation of the post-OPC layout includes performing a rule-based OPC process, wherein a plurality of first reticle features for the first test cell area are provided on the basis of the plurality of first target features, and performing a model-based OPC process, wherein a plurality of second reticle features for the second test cell area are provided on the basis of the plurality of second target features.

Abstract: A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.

Abstract: A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.

Abstract: A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.

Abstract: A die seal of a semiconductor device may be provided with a varying pattern density such that a gradient between the die region and the die seal may be reduced. Consequently, for a given width of the die seal, a required mechanical stability may be achieved, while at the same time differences in topography between the die region and the die seal may be reduced, thereby contributing to superior process conditions for sophisticated lithography processes.